Rectifier Diodes

Symbol

Min

Max.

Typ

Units

Conditions

I_F(AV)M

6000

A

Sinewave,180^oconduction,T_c=100^oC

I_FRMS

8460

A

Nominal value

I_FSM

75

kA

T_j=150°C, V_R=0,8V_RRM, t_p=10ms

I²t

23x10³

kA²s

10 msec

V_FM

0.95

V

I_FM = 2000 A; Tj = 25 ^oC

I_RM(REC)

290

A

I_FM = 1000 A; dI_F/dt = 10 A/ms,

T_j = 160 ^oC

Q_rr

-

mC

t_RR

-

ms

Symbol

Min.

Max.

Typ.

Units

Conditions

T_j

-55

+150

^oC

T_stg

-55

+150

^oC

R_Q (j-c)

12

24

^oC/kW

Double sided cooled

Single sided cooled

R_Q (c-s)

2

4

^oC/kW

P

63

77

kN

W

-

g

Symbol

Min

Max.

Typ

Units

Conditions

I_F(AV)M

1363

A

Sinewave,180^oconduction,T_c=85^oC

I_F(RMS)M

2142

A

Nominal value

I_FSM

19

kA

T_j=25°C, V_R=0,8V_RRM, t_p=10ms

I²t

1.8×10³

kA²s

10 msec

V_FM

1.6

V

I_FM = 1500 A; Tj = 150 ^oC

I_RM(REC)

-

A

I_FM = 1000 A; dI_F/dt = 10 A/ms,

Tj = 150 ^oC

Q_rr

-

mC

t_RR

-

ms

Symbol

Min.

Max.

Typ.

Units

Conditions

T_j

-40

+150

^oC

T_stg

-40

+150

^oC

R_Q (j-c)

20

K/kW

Double side cooled

R_Q (c-s)

5

K/kW

Double side cooled

R_Q (j-s)

-

K/kW

Double side cooled

P

20

24

kN

W

0.46

Kg

about

Symbol

Min

Max.

Typ

Units

Conditions

IF(AV)

3500

A

Sinewave,180o conduction,Tc =70oC

IFRMS

5400

A

Nominal value

IFSM

68000

60000

A A

8.3 msec (60Hz), sinusoidal wave- shape,180o conduction, Tj = 150 oC

10.0 msec (50Hz), sinusoidal wave- shape,180o conduction, Tj = 150 oC

I2t

1.3x106

A2s

8.3 msec and 10 msec

VFM

1.50

V

IFM = 3000 A;

IRM(REC)

A

IFM = 1000 A; dIF/dt = 10 A/µs; Tjmax

Qrr

µC

IFM = 1000 A; dIF/dt = 10 A/µs; Tjmax

tRR

*

µs

Symbol

Min.

Max.

Typ.

Units

Conditions

Tj

-40

+150

oC

Tstg

-40

+150

oC

RΘ (j-c)

0.023

0.046

o

C/W

Double sided cooled

Single sided cooled

RΘ (c-s)

.010

.020

o

C/W

Double sided cooled * Singlesided cooled *

P

6000

8000

lb.

W

oz. g

Condition

Value

Units

V_RSM= V_RRM+50V

200-400

V

25, V_RM=V_RRM

5(max)

mA

175, V_RM=V_RRM

30(max)

mA

180°,half sine wave,50Hz

11000

A

25, I_FM=6000A,F=20kN

1.12

V

175

-40~175

35-40

KN

Parameter

Symbol

Voltage class

Unit

-6

-8

Repetitive peak reverse voltage

VRRM

600

800

V

Repetitive peak off-state voltage

VDRM

600

800

V

RMS on-state current

IT (RMS)

1.25

A

Average on-state current

IT (AV)

0.8

A

Surge on-state current

ITSM

22.5

A

I²t for fusing

I²t

2.5

A²s

Average gate power dissipation

PG (AV)

0.2

W

Peak gate reverse voltage

VRGM

8

V

Peak gate forward current

IFGM

1.2

A

Junction temperature

Tj

– 40 to +125

°C

Storage temperature

Tstg

– 40 to +150

°C

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Repetitive peak reverse current

IRRM

-

-

0.5

mA

Tj =125°C, VRRM applied

Repetitive peak off-state current

IDRM

-

-

0.5

mA

Tj =125°C, VDRM applied, RGK = 1 kÙ

On-state voltage

VTM

-

-

1.45

V

Ta =25°C, ITM =2.5A

Gate trigger voltage

VGT

-

-

0.8

V

Tj =25°C, VD = 12 V, R_L = 140Ù

Gate non-trigger voltage

VGD

0.1

-

-

V

Tj =125°C, VD = VDRM,RGK = 1 kÙ

Gate trigger current

IGT

20

-

200

μA

Tj =25°C, VD = 12 V, R_L = 140Ù

Holding current

IH

-

-

5

mA

Tj =25°C, VD = 12 V,RGK = 1 kÙ

Thermal resistance

Rth (j-a)

-

-

150

°C/W

Junction to ambient

Item

A

B

C

D

E

F

IGT (μA)

20 to 50

40 to 80

70 to 100

20 to 80

20 to 100

100 to 200

Parameter

Symbol

Typ

Unit

Repetitive peak off-statevoltages

VDRM

VRRM

800

V

Average on-state current

IT(AV)

16

A

RMS on-state current

IT(RMS)

25

A

Non-repetitive peak on-state current

ITSM

314

A

Max. Operating Junction

Temperature

T

110

oC

Storage Temperature

Tstg

-45~150

oC

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Repetitive peak off-state voltages

VDRM

VRRM

800

-

-

V

Average on-state current

IT(AV)

o

-

16

-

A

RMS on-state current

IT(RMS)

all conduction angles

-

25

-

A

On-state voltage

VTM

ITM=50A,tp=380μs

-

1.3

1.60

V

Holding current

IH

IT = 500 mA Gate open

-

-

50

mA

Latching current

IL

IG = 1.2 IGT

-

-

90

mA

Gate trigger current

IGT

VD =12 V; IT = 0.1 A

4.0

-

40

mA

Gate trigger voltage

VGT

VD =12 V; IT = 0.1 A

-

-

1.3

V

Symbol

Unit

Rating

Conditions

VRRM

KV

12

IF (AV)

mA

500

Tamb=60 oC

50HZ Sine-half Wave

Rectification Average Value

IFSM

A

30

Tamb=25 oC

50HZ Sine-half Wave,One Shot

IRSM

μA

0.1

Pulse width 1ms triangle wave single pulse

Tjmax

oC

130

Symbol

Unit

Rating

Test conditions

VFM

V

25max

IFM=500mA

IRM1

μA

10max

VRM=12KV

IRM2

μA

10max

Tamb=100oC

VRM=12KV

VZ

KV

12

IR=2A

trr

nS

-

IF=2mA, IRM=4mA 90%

Parameter

Symbol

Value

Unit

Peak pulse power dissipation on 10/1000μs waveform

PPP

15000

W

Peak pulse current of on 10/1000μs waveform

IPP

See next table

A

Steady state power dissipation at TL=75

PM(AV)

8

W

Operating junction and Storage temperature range

TSTG, TJ

-55 to +125

Peak forward surge current, 8.3ms single half sine-wave

IFSM

400

A

Part Number

VR

IR@VR

VBR@IT

IT

VC@IPP

IPP�

Uni-Polar

Bi-Polar

V

μA

min(V)

max(V)

mA

max(V)

A

15KP17A

15KP17CA

17.0

5000

18.90

20.90

5

29.3

515.4

15KP18A

15KP18CA

18.0

5000

20.00

22.10

5

30.9

488.7

15KP20A

15KP20CA

20.0

1500

22.20

24.50

5

34.3

440.2

15KP22A

15KP22CA

22.0

500

24.40

26.90

5

37.1

407.0

15KP24A

15KP24CA

24.0

150

26.70

29.50

5

40.7

371.0

15KP26A

15KP26CA

26.0

50

28.90

31.90

5

44.0

343.2

15KP28A

15KP28CA

28.0

25

31.10

34.40

5

47.5

317.9

15KP30A

15KP30CA

30.0

15

33.30

36.80

5

50.7

297.8

15KP33A

15KP33CA

33.0

2

36.70

40.60

5

54.7

276.1

15KP36A

15KP36CA

36.0

2

40.00

44.20

5

59.8

252.5

15KP40A

15KP40CA

40.0

2

44.40

49.10

5

65.8

229.5

15KP43A

15KP43CA

43.0

2

47.80

52.80

5

69.8

216.3

15KP45A

15KP45CA

45.0

2

50.00

55.30

5

72.8

207.4

15KP48A

15KP48CA

48.0

2

53.30

58.90

5

77.7

194.3

15KP51A

15KP51CA

51.0

2

56.70

62.70

5

82.9

182.1

15KP54A

15KP54CA

54.0

2

60.00

66.30

5

87.7

172.2

15KP58A

15KP58CA

58.0

2

64.40

71.20

5

93.8

161.0

15KP60A

15KP60CA

60.0

2

66.70

73.70

5

97.4

155.0

15KP64A

15KP64CA

64.0

2

71.10

78.60

5

104.2

144.9

15KP70A

15KP70CA

70.0

2

77.80

86.00

5

113.6

132.9

15KP75A

15KP75CA

75.0

2

83.30

92.10

5

122.0

123.8

15KP78A

15KP78CA

78.0

2

86.70

95.80

5

126.1

119.7

15KP85A

15KP85CA

85.0

2

94.40

104.0

5

137.6

109.7

15KP90A

15KP90CA

90.0

2

100.0

111.0

5

145.6

103.7

15KP100A

15KP100CA

100.0

2

100.0

111.0

5

161.3

93.6

15KP110A

15KP110CA

110.0

2

111.0

123.0

5

178.6

84.5

15KP120A

15KP120CA

120.0

2

122.0

135.0

5

192.3

78.5

15KP130A

15KP130CA

130.0

2

133.0

147.0

5

208.3

72.5

15KP150A

15KP150CA

150.0

2

144.0

159.0

5

241.9

62.4

15KP160A

15KP160CA

160.0

2

167.0

185.0

5

258.6

58.4

Part Number

VR

IR@VR

VBR@IT

IT

VC@IPP

IPP�

Uni-Polar

Bi-Polar

V

μA

min(V)

max(V)

mA

max(V)

A

15KP170A

15KP170CA

170.0

2

178.0

197.0

5

272.7

55.4

15KP180A

15KP180CA

180.0

2

189.0

209.0

5

288.5

52.3

15KP200A

15KP200CA

200.0

2

224.0

247.0

5

319.1

47.3

15KP220A

15KP220CA

220.0

2

246.0

272.0

5

352.5

42.8

15KP240A

15KP240CA

240.0

2

268.0

292.0

5

384.6

39.3

15KP260A

15KP260CA

260.0

2

289.0

317.0

5

416.7

36.2

15KP280A

15KP280CA

280.0

2

311.0

341.0

5

454.5

33.2

Parameter

Symbol

Min

Max

Typ

Unit

Conditions

Average value of forward current

IF(AV)

195

A

50 Hz sinewave,180o conduction, Tc = 85 °C

RMS value of forward current

IF(RMS)

300

A

50 Hz sinewave,180o conduction, Tc = 85 °C

Peak one cycle surge

(non repetitive) current

IFSM

5

kA

50 Hz sinewave,180o conduction, Tj = Tjmax, VR = 0

I squared t

I2 t

125

kA2s

Tj = Tjmax

Peak forward voltage

VFM

1.35

V

Forward current 500 A, Tj = Tjmax

Threshold voltage

VF(TO)

0.85

V

Tj = Tjmax

Forward slope resistance

rF

1

mΩ

Tj = Tjmax

RMS isolation voltage

VINS

3000

V

AC 50 Hz, 60 s

Parameter

Symbol

Min

Max

Typ

Unit

Conditions

Average value of forward current

IF(AV)

780

A

50 Hz sinewave,180o conduction, Tc = 100 °C

RMS value of forward current

IF(RMS)

1225

A

Peak one cycle surge

(non repetitive) current

IFSM

21

kA

50 Hz sinewave,180o conduction, Tj = Tjmax, VR = 0

I square t

I2 t

2205

kA2s

Tj = Tjmax

Peak forward voltage

VFM

1.15

V

Forward current 1600 A, Tjmax

Threshold voltage

VF(TO)

0.75

V

Tj = Tjmax

Forward slope resistance

rF

0.25

mΩ

Tj = Tjmax

RMS isolation voltage

VINS

4500

V

AC 50 Hz, 60 s

ID

Output current (D.C.)

Single phase. full wave. TC=117 ^oC

75

A

IFSM

Surge Forward Current

1 cycle, 50/60HZ, peak value, non-repetitive

910/1000

A

I²t

I²t

Value for one cycle of surge current

4100

A²S

Tj

Junction Temperature

-40 to +150

^oC

Tstg

Storage Temperature

-40 to +125

^oC

VISO

Isolation Breakdown Voltage(R.M.S.)

Main Terminal to case 1minute

2500

V

Md

Mounting torque

Mounting(M5)

Recommended Value 1.5-2.5(15-25)

2.7(28)

Nm(kgfcm)

IRRM

Repetitive Peak Reverse Current, max.

Tj=150 ^oCat VRRM

5.0

mA

VFM

Forward Voltage Drop, max.

IFM=75A, Tj=25 ^oCInst. measurement

1.2

V

Rth(j-c)

Thermal Impedance, max.

Junction to case

0.24

^oC/W

1000

1100

MDQ100-10

1200

1300

MDQ100-12

1600

1700

MDQ100-16

1800

1900

MDQ100-18

2200

2300

MDQ100-22

2400

2500

MDQ100-24

ID

Output current (D.C.)

Single phase. full wave. TC=117 ^oC

100

A

IFSM

Surge Forward Current

1 cycle, 50/60HZ, peak value, non-repetitive

910/1000

A

I²t

I²t

Value for one cycle of surge current

4100

A²S

Tj

Junction Temperature

-40 to +150

^oC

Tstg

Storage Temperature

-40 to +125

^oC

VISO

Isolation Breakdown Voltage(R.M.S.)

Main Terminal to case 1minute

2500

V

Md

Mountingtorque

Mounting(M6)

Recommended Value2.5-3.9(25-40)

4.7(48)

N

Symbol

Parameter

Rating

Unit

BR2504

BR2506

BR2508

BR2510

VRRM

Peak reverse repetitive voltage

400

600

800

1000

V

VRSM

Peak reverse non-repetitive voltage

500

700

900

1100

V

Symbol

Parameter

Test condition

Rating

Unit

IF(AV)

Forward average current

180° sine half-wave 50HZ single-sided heatdissipation, TC=55 â��

25

A

IFSM

Forward surge current

t=10ms,50HZ,sin,Tjm

300

A

I2t

I2t value

374

A2S

VISO

Isolation voltage

AC one minute

2500

V

Tj

Operating junction temperature

-40 to +150

�

Tjm

Rated junction temperature

150

�

Tstg

Storage temperature

-40 to +125

�

Md

Mounting torque M5

2

N·m

Wt

Weight

18

g

Symbol

Parameter

Test condition

Rating

Unit

IRRM

Peak reverse repetitive current

VR=VRRM, sine half-wave, Tj=25 â��

5

μA

VR=VRRM, sine half-wave, Tj=150â��

500

μA

VFM

Peak forward voltage

IFM =17.5A, Tj=25

1.1

V

Rth(j-c)

Thermal impedance(junction-case)

Single-sided heat dissipation, sine half-wave

1.9

�/W

ZX70(R)

Units

14 to 16

70

70

A

140

110

110

A

1500

A

1250

A

7100

A2s

6450

A2s

100 to 1200

1400 to 1600

V

-65 to 180

-65 to 150

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Repetitive peak reverse voltage

V_RRM

1600

-

V

Non repetitive peak reverse voltage

V_RSM

1700

-

V

Max. average forward current

I_F(AV)

165

-

A

Sinewave,180^o conduction,T_c=100^oC

Max. RMS forward current

I_F(RMS)

260

-

A

Nominal value; T_c=100^oC

Max. peak, one-cycle forward,

non-repetitive surge current

I_FSM

2500

-

A

10.0 msec (50Hz), half sinewave,

T_j = 25 ^oC, V_RM = 0.6V_RRM

Maximum I²t for fusing

I²t

31000

-

A²s

Max. forward voltage drop

V_F

1.5

V

I_F = 500A; T_c=25^oC

Threshold voltage

V_F0

0.85

V

T_j=180°C

slope resistance

r_T

1.3

mΩ

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

T_j

-40

+180

^oC

Storage temperature

T_stg

-50

+180

^oC

Reverse recovery charge

Q_rr

-

μc

Thermal resistance - junction to case

R_Q (j-c)

-

-

0.35

K/W

Thermal resistamce - case to heatsink

R_Q (c-s)

-

-

0.08

K/W

Mounting force

P

10

Nm

± 20%

Weight

W

-

-

-

g

Case style

-

See Outline Table

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Repetitive peak reverse voltage

V_RRM

1800

V

Non repetitive peak reverse voltage

V_RSM

1900

V

Max. average forward current

I_F(AV)

20

A

Sinewave,180^o conduction,T_c=100^oC

Max. RMS forward current

I_F(RMS)

33

A

Nominal value; T_c=100^oC

Max. peak, one-cycle forward,

non-repetitive surge current

I_FSM

0.3

kA

10.0 msec (50Hz), half sinewave,

T_vj = T_vj max, V_RM = 0.6V_RRM

Maximum I²t for fusing

I²t

4.9

kA²s

Max. forward voltage drop

V_F

2.15

V

I_F = 650A; T_vj = T_vj max

Threshold voltage

V_TO

1.1

V

I_F < 500A

Slope resistance

r_T

1.5

mΩ

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Repetitive peak reverse leakage and off state

I_RRM

70

mA

T_vj = T_vj max

Operating temperature

T_j

-40

+140

^oC

Storage temperature

T_stg

-40

+150

^oC

Maximum Reverse Recovery Time

T_rr

2.2

μS

Reverse recovery charge

Q_rr

870

μAc

Thermal resistance - junction to case

R_Q (j-c)

-

-

0.26

^oC/W

Thermal resistamce - case to heatsink

R_Q (c-s)

-

-

0.04

^oC/W

Mounting force

P

20

Nm

± 20%

Weight

W

-

-

-

g

About

Case style

-

See Outline Table