Silicon Transistors

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40-150

Operating junction temperature range

Tj

-40-125

Repetitive peak off-state voltage

VDRM

1600

V

Repetitive peak reverse voltage

VRRM

1600

V

Average on-state current (TC=80)

IT(AV)

56

A

RMS on-state current(TC=80)

IT(RMS)

90

A

Non repetitive surge peak on-state current

(tp=10ms)

ITSM

1250

A

I2t value for fusing (tp=10ms)

I2t

7800

A2s

Critical rate of rise of on-state current

(IG=2×IGT)

dI/dt

150

A/μs

Peak gate current

IGM

10

A

Peak gate power

PGM

20

W

Average gate power dissipation(Tj=125â��)

PG(AV)

2

W

Symbol

Test Condition

Value

Unit

MIN.

TYP.

MAX.

IGT

VD=12V RL=30Ω

10

-

80

mA

VGT

-

-

1.5

V

VGD

VD=VDRM Tj=125

0.25

-

-

V

IL

IG=1.2 IGT

-

-

200

mA

IH

IT=1A

-

-

150

mA

dV/dt

VD=2/3VDRM Tj=125 Gate Open

1000

-

-

V/μs

Symbol

Parameter

Value(MAX)

Unit

VTM

ITM=110A tp=380μs

TC=25

1.8

V

IDRM

VD=VDRM VR=VRRM

TC=25

50

μA

IRRM

TC=125

10

mA

Symbol

Parameter

Value

Unit

Rth(j-c)

junction to case(DC)

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

350

V

Collector-Emitter Voltage

VCEO

220

V

Emitter-Base Voltage

VEBO

9

V

Collector Current

IC

3

A

Total Power Dissipation

PC

25

W

Junction Temperature

Tj

150

Storage Temperature

Tstg

-55~150

CHARACTERISTICS

SYMBOL

TEST CONDITION

MIN

MAX

UNIT

Collector-Base Voltage

VCBO

Ic=1mA Ie=0

350

V

Collector-Emitter Voltage

VCEO

Ic=1mA Ib=0

220

V

Emitter-Base Voltage

VEBO

Ie=1mA Ic=0

9

V

Collector-Base Cutoff Current

ICBO

Vcb=350v Ie=0

10

UA

Collector-Emitter Cutoff

Current

ICEO

Vce=220v Ib=0

10

UA

Emitter-Base Cutoff Current

IEBO

Veb=9v Ic=0

10

UA

Collector-Emitter Saturation

Voltage

Vce(sat)

Ic=0.5A Ib=0.1A

0.9

V

Base-Emitter Saturation Voltage

Vbe(sat)

Ic=0.5A Ib=0.1A

1.5

V

DC Current Gain

Hfe

VCE=5v IC=0.2A

20

25

Diode Forward Voltage

Vf

IF=1.0A

2

V

Storage Time

ts

Ic=0.25A (UI9602)

1.5

2.5

us

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

60

V

Emitter-Base Voltage

VEBO

6.0

V

Collector Current

IC

15

A

Base Current

IB

0.5

A

Total Dissipation at

Ptot

120

W

Max. Operating Junction Temperature

Tj

120

oC

Storage Temperature

Tstg

-55~150

oC

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Collector Cut-off Current

ICEO

VCE = 60V, IB = 0

-

-

1.0

mA

Collector Cut-off Current

ICBO

VCB = 60V, IE = 0

-

-

0.5

mA

Emitter Cut-off Current

IEBO

VEB = 5.0V, IC = 0

-

-

2.0

mA

Collector-Emitter Sustaining Voltage

VCEO

IC = 30mA, IB = 0

60

-

-

V

DC Current Gain

hFE(1)

VCE = 3.0V, IC = 4.0A

2000

-

-

hFE(2)

VCE = 3.0V, IC = 10A

500

-

-

Collector-Emitter Saturation Voltage

VCE(sat)

IC = 10A, IB = 100mA

-

-

2.5

V

IC = 15A, IB = 150mA

-

-

4.0

Base-Emitter Saturation Voltage

VBE(sat)

IC = 10A, IB = 100mA

-

-

3.5

V