Triac Transistors

Symbol

Parameter

Value

Unit

I_T(RMS)

Rms on-state current(full sine wave)

24

A

I_TSM

Current (T_j=25 ,tp=20ms)

240

A

I²t

I²t for fusing(tp=10ms)

200

A²S

IGM

Peak gate current

5

A

VGM

Peak gate voltage

16

V

PGM

Peak gate power

40

W

PG(AV)

Average gate power

1

W

dIT/dt

50

A/μs

IV

50

Tstg

Tj

Storage temperature

Operating junction temperature

-40--+150

-40--+125

Symbol

Parameter

Condition

Type

Unit

Rth j-c

Thermal Resistance,Junction to case

One cycle

BTA

2.1

W

BTB

1.2

W

Rth j-a

Thermal Resisatance,Junction to ambient

----

--

60

W

Symbol

Conditions

Type

Max

Unit

I_GT

BTB24

V_D=12V I_T=0.1A

T2+ G+

T2+ G-

T2- G-

11

15

20

18

30

30

mA

mA

mA

I_H

V_D=12V I_GT=0.1A

50

mA

V_TM

I_T=24A

-1.25-

1.5

V

I _DRM

V _DRM=800V

10

μA

I_RRM

V_RRM=800V

15

μA

V_GT

V_D=12V I_T=0.1A

Tj=125

--

1.5

V

I_D

V_D=V_DRM(_MAX)

Tj=125

--

0.5

mA

Symbol

Test Conditions

Type

Min

Max

Unit

dV/dt

V_DM=67%V_Dm(_MAX)

Tj=125

500

250

--

V/μs

(dV/dt)c

(dI/dt)c=7A/ms Tj=125

--

10

μs

Order codes

Marking

Package

Packaging

BD135

BD135

SOT-32

Tube

BD135-16

BD135-16

BD136

BD136

BD136-16

BD136-16

BD139

BD139

BD139-10

BD139-10

BD139-16

BD139-16

BD140

BD140

BD140-10

BD140-10

BD140-16

BD140-16

Symbol

Parameter

Value

Unit

NPN

PNP

BD135

BD139

BD136

BD140

VCBO

Collector-base voltage (IE = 0)

45

80

-45

-80

V

VCEO

Collector-emitter voltage (IB = 0)

45

80

-45

-80

V

VEBO

Emitter-base voltage (IC = 0)

5

-5

V

IC

Collector current

1.5

-1.5

A

ICM

Collector peak current

3

-3

A

IB

Base current

0.5

-0.5

A

PTOT

Total dissipation at Tc ≤ 25 °C

12.5

W

PTOT

Total dissipation at Tamb ≤ 25 °C

1.25

W

Tstg

Storage temperature

-65 to 150

°C

Tj

Max. operating junction temperature

150

°C

Symbol

Parameter

Max value

Unit

Rthj-case

Thermal resistance junction-case

10

°C/W

Rthj-amb

Thermal resistance junction-ambient

100

°C/W

Symbol

Parameter

Polarity

Test conditions

Value

Unit

Min.

Typ.

Max.

ICBO

Collector cut-off current (I =0)

NPN

VCB = 30 V

VCB = 30 V, TC = 125 °C

0.1

10

µA

µA

PNP

VCB = -30 V

VCB = -30 V, TC = 125 °C

-0.1

-10

µA

µA

IEBO

Emitter cut-off current

(I =0)

NPN

VEB = 5 V

10

µA

PNP

VEB = -5 V

-10

µA

VCEO(sus)(1)

Collector-emitter sustaining voltage (IB=0)

NPN

IC = 30 mA BD135

BD139

45

80

V V

PNP

IC = -30 mA BD136

BD140

-45

-80

V V

VCE(sat) (1)

Collector-emitter saturation voltage

NPN

IC = 0.5 A, IB = 0.05 A

0.5

V

PNP

IC = -0.5 A, IB = -0.05 A

-0.5

V

VBE (1)

Base-emitter voltage

NPN

IC = 0.5 A, VCE = 2 V

1

V

PNP

IC = -0.5 A, VCE = -2 V

-1

V

hFE (1)

DC current gain

NPN

IC = 5 mA, VCE = 2 V

IC = 150 mA, VCE = 2 V IC = 0.5 A, VCE = 2 V

25

40

25

250

PNP

IC = -5 mA, VCE = -2 V

IC = -150 mA, VCE = -2 V IC = -0.5 A, VCE = -2 V

25

40

25

250

hFE (1)

hFE groups

NPN

IC = 150 mA, VCE = 2 V BD139-10

BD135-16/BD139-16

63

100

160

250

PNP

IC = -150 mA, VCE = -2 V BD140-10

BD136-16/BD140-16

63

100

160

250