Inverter Thyristor

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Yangzhou Positioning Tech Co., Ltd

3rd Floor, Weiheng Building No.20 B Area, Jiangsu, Yangzhou - 225012, China

Mobile : +86-13805278321, +86-13952528675

Phone : +86-51487782298

Fax : +86-51487782297



Specifications

Certificate ISO9001-2008,ROHS
Brand YZPST
Productivity 100
Transportation Ocean,Air
Supply Ability 500
HS Code 85413000
Incoterm FOB,CFR,CIF

Additional Information

Product Code YZPST-R355SH12FLO
Port SHANGHAI
Payment Terms L/C, T/T, Other
Delivery Time 30 Days


Detail 01

VRRM (1)

VDRM (1)

VRSM (1)

1200

1200

1300

 

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

20 mA

150mA (3)

Critical rate of voltage rise

dV/dt (4)

200 V/msec

 


Detail 02

Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Max. average value of on-state current

IT(AV)M

 

1271

 

A

Sinewave,180o conduction,Tc=55oC

RMS value of on-state current

IT(RMS)m

 

2599

 

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

 

ITSM

 

-

 

18.0

 

kA

 

kA

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

1.62x106

 

A2s

8.3 msec

Latching current

IL

 

-

 

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

 

1000

 

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

 

2.02

 

V

ITM = 2000 A

Critical rate of rise of on-state

current (5, 6)

di/dt

 

1500

 

A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

 

1000

 

A/ms

Switching from VDRM £ 1000 V

 

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

30

 

W

 

Average gate power dissipation

PG(AV)

 

2

 

W

 

Peak gate current

IGM

 

-

 

A

 

Gate current required to trigger all units

IGT

 

300

 

mA

VD = 10 V;IT=3A;Tj = +25 oC

 

Gate voltage required to trigger all units

 

 

VGT

 

3.0

 

V

 

VD = 10 V;IT=3A;Tj = +25 oC

 

Peak negative voltage

VRGM

 

5

 

V

 

 

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

tgd

 

1.0

-

ms

VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C

Turn-on time

tgt

 

2.0

-

 

Turn-off time (with VR = -5 V)

tq

-

-

15

ms

ITM=1000A, tp=1000us, di/dt=60A/us, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/us

Reverse recovery current

Irm

 

-

 

A

ITM=4000A, tp=2000us, di/dt=60A/us

 

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

 

oC

 

Storage temperature

Tstg

-40

+150

 

oC

 

Thermal resistance - junction to case

RQ (j-c)

 

-

-

 

K/kW

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)

 

-

-

 

K/kW

Double sided cooled *

Single sided cooled *

Thermal resistance - junction to case

RQ (j-s)

 

24

48

 

K/kW

Double sided cooled

Single sided cooled

Mounting force

F

19

25

-

kN

 

Weight

W

 

 

-

Kg

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