Power Thyristor

di/dt

800

A/ms

Switching from V_DRM£ 1000 V,

non-repetitive

di/dt

200

A/ms

Switching from V_DRM£ 1000 V

Symbol

Min.

Max.

Typ.

Units

Conditions

I_T(AV)

1000

A

Sinewave,180^o conduction,T_c=80^oC

I_TRMS

1570

A

Nominal value

I_TSM

-

18500

A

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I²t

1.66x10⁶

A²s

8.3 msec and 10.0 msec

I_L

-

mA

V_D = 24 V; R_L= 12 ohms

I_H

-

mA

V_{D =} 24 V; I = 2.5 A

V_TM

1.45

V

I_TM = 1000 A; Duty Cycle £ 0.01%; T_j =1 25 ^oC

Symbol

Min.

Max.

Typ.

Units

Conditions

P_GM

100

W

t_p = 40 us

P_G(AV)

5

W

I_GM

-

A

I_GT

-

120

-

mA

mA

mA

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +125^oC

V_GT

-

3.0

-

V

V

V

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC

V_D = Rated V_DRM; R_L = 1000 ohms;T_j = + 125 ^oC

V_GRM

20

V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

t_d

-

0.7

ms

I_TM = 50 A; V_D = Rated V_DRM

Gate pulse: V_G = 20 V; R_G = 20 ohms; t_r = 0.1 ms; t_p = 20 ms

Turn-off time (with V_R = -50 V)

t_q

-

50

ms

I_TM = 1000 A; di/dt = 25 A/ms;

V_R³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% V_DRM; V_G = 0;T_j = 125 ^oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Q_rr

*

mC

I_TM = 1000 A; di/dt = 25 A/ms;

V_R³ -50 V

Symbol

Min.

Max.

Typ.

Units

Conditions

T_j

-40

+125

^oC

T_stg

-40

+125

^oC

R_Q (j-c)

0.023

-

^oC/W

Double sided cooled

Single sided cooled

R_Q (c-s)

0.0075

-

^oC/W

Double sided cooled *

Single sided cooled *

P

22.2

26.6

kN

W

-

g

About

Symbol

Min.

Max.

Typ.

Units

Conditions

I_T(AV)

4000

A

Sinewave,180^o conduction,T_c=70^oC

I_TRMS

4900

A

Nominal value

I_TSM

55000

52000

A

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I²t

5.5x10⁶

A²s

8.3 msec

Latching current

I_L

1000

mA

V_D = 24 V; R_L= 12 ohms

Holding current

I_H

500

mA

V_{D =} 24 V; I = 2.5 A

Peak on-state voltage

V_TM

2.30

V

I_TM = 3000 A;

Critical rate of rise of on-state

current (5, 6)

di/dt

800

A/ms

Switching from V_DRM£ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

300

A/ms

Switching from V_DRM£ 1000 V

Symbol

Min.

Max.

Typ.

Units

Conditions

P_GM

200

W

t_p = 40 us

P_G(AV)

5

W

I_GM

20

A

I_GT

300

200

125

mA

mA

mA

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +125^oC

V_GT

0.30

5

4

V

V

V

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC

V_D = Rated V_DRM; R_L = 1000 ohms;

T_j = + 125 ^oC

V_GRM

20

V

Symbol

Min.

Max.

Typ.

Units

Conditions

t_d

2.0

ms

I_TM = 50 A; V_D = 67% V_DRM

Gate pulse: V_G = 30 V; R_G = 10 ohms; t_r = 0.1 ms; t_p = 20 ms

t_q

80

ms

I_TM > 2000 A; di/dt = 25 A/ms;

V_R³ -5 V; Re-applied dV/dt = 400 V/ms linear to 67% V_DRM ;

T_j = 125 ^oC; Duty cPSTCle ³ 0.01%

I_rr

200

A

I_TM > 2000 A; di/dt = 25 A/ms;

V_R³ -50 V; T_j = 125 ^oC

Symbol

Min.

Max.

Typ.

Units

Conditions

T_j

-40

+125

^oC

T_stg

-40

+150

^oC

R_Q (j-c)

0.012

^oC/W

Double sided cooled

Single sided cooled

R_Q (c-s)

0.002

^oC/W

Double sided cooled *

Single sided cooled *

P

10000

12000

lb.

kN

W

3.5

1.60

Lb.

Kg.

Thyristor

Ratings

Symbol

Definition

Conditions

min.

typ.

max.

Unit

V EQ \F(RSM,DSM)

max. non-repetitive reverse/forward blocking voltage

T_J = 25°C

1900

V

V EQ \F(RRM,DRM)

max. repetitive reverse/forward blocking voltage

T_J = 25°C

1800

V

V_T

On-state voltage

I_T=1500 A

T_J = 25°C

1.70

V

I_T(AV)

average forward current

T_C=25°C

800

A

I_T(RMS)

RMS forward current

180° sine

2214

A

R_thJC

thermal resistance junction to case

K/W

R_thCH

thermal resistance case to heatsink

K/W

R_thJK

thermal resistance junction to heatsink

0.032

K/W

I_TSM

max. forward surge current

t = 10 ms; (50 Hz), sine

T_J = 25°C

12.7

kA

I²t

value for fusing

t = 10 ms; (50 Hz), sine

T_J = 25°C

806

kA²s

di/dt

Rate of rise of on-state current

T_J = 125°C; f = 50 Hz

t_P=200µs;di_G/dt=0.15A/µs;

I_G=0.15A;V_D=V_DRM

repetitive

500

A/µs

non-repet

1000

A/µs

dv/dt

Maximum linear rate of rise of off-state voltage

V_D= V_DRM

R_GK =∞; method 1 (linear voltage rise)

T_J = 125°C

1000

V/µs

V_GT

gate trigger voltage

V_D = 6V

T_J = 25°C

3.0

V

I_GT

gate trigger current

V_D = 6V

T_J = 25°C

300

mA

I_L

latching current

T_J = 25°C

A

I_H

holding current

T_J = 25°C

500

mA

t_gd

gate controlled delay time

T_J = 25°C

2.5

µs

t_q

Turn-off time

V_R=10 V; I_T=20A; V_D=V_DRM

T_J = 150°C

200

400

µs

T_stg

storage temperature

-40

125

°C

T_J

virtual junction temperature

-40

125

°C

W_t

Weight

g

F

mounting force

10

20

kN

I_{RRM /} I_DRM

15 mA

70 mA (3)

dV/dt (4)

200 V/msec

Symbol

Min.

Max.

Typ.

Units

Conditions

I_T(AV)M

964

A

Sinewave,180^o conduction,T_c=55^oC

I_T(RMS)m

1971

A

Nominal value

I_TSM

-

9.4

kA

kA

8.3 msec (60Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I²t

442x10³

A²s

8.3 msec

I_L

-

mA

V_D = 24 V; R_L= 12 ohms

I_H

1000

mA

V_{D =} 24 V; I = 2.5 A

V_TM

1.96

V

I_TM = 1400 A

di/dt

1500

A/ms

Switching from V_DRM £ 1000 V,

non-repetitive

di/dt

1000

A/ms

Switching from V_DRM £ 1000 V

Symbol

Min.

Max.

Typ.

Units

Conditions

P_GM

30

W

P_G(AV)

2

W

I_GM

-

A

I_GT

300

mA

V_D = 10 V;I_T=3A;T_j = +25 ^oC

V_GT

3.0

V

V_D = 10 V;I_T=3A;T_j = +25 ^oC

V_RGM

5

V

Symbol

Min.

Max.

Typ.

Units

Conditions

t_gd

1.0

-

ms

V_D=67% V_DRM, I_T=2000A, di/dt=60A/us, I_FG=2A, t_r=0.5us, T_j=25C

t_gt

2.0

-

t_q

-

-

25

ms

I_TM=1000A, t_p=1000us, di/dt=60A/us, V_r=50V, V_dr=80%V_DRM, dV_dr/dt=20V/us

I_rm

-

A

I_TM=4000A, t_p=2000us, di/dt=60A/us

Symbol

Min.

Max.

Typ.

Units

Conditions

T_j

-40

+125

^oC

T_stg

-40

+150

^oC

R_Q (j-c)

-

-

K/kW

Double sided cooled

Single sided cooled

R_Q (c-s)

-

-

K/kW

Double sided cooled *

Single sided cooled *

R_Q (j-s)

32

64

K/kW

Double sided cooled

Single sided cooled

F

10

20

-

kN

W

-

Kg

about

1200

1200

1300

I_{RRM /} I_DRM

20 mA

150mA (3)

dV/dt (4)

200 V/msec

Symbol

Min.

Max.

Typ.

Units

Conditions

I_T(AV)M

1271

A

Sinewave,180^o conduction,T_c=55^oC

I_T(RMS)m

2599

A

Nominal value

I_TSM

-

18.0

kA

kA

8.3 msec (60Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I²t

1.62x10⁶

A²s

8.3 msec

I_L

-

mA

V_D = 24 V; R_L= 12 ohms

I_H

1000

mA

V_{D =} 24 V; I = 2.5 A

V_TM

2.02

V

I_TM = 2000 A

di/dt

1500

A/ms

Switching from V_DRM £ 1000 V,

non-repetitive

di/dt

1000

A/ms

Switching from V_DRM £ 1000 V

Symbol

Min.

Max.

Typ.

Units

Conditions

P_GM

30

W

P_G(AV)

2

W

I_GM

-

A

I_GT

300

mA

V_D = 10 V;I_T=3A;T_j = +25 ^oC

V_GT

3.0

V

V_D = 10 V;I_T=3A;T_j = +25 ^oC

V_RGM

5

V

Symbol

Min.

Max.

Typ.

Units

Conditions

t_gd

1.0

-

ms

V_D=67% V_DRM, I_T=2000A, di/dt=60A/us, I_FG=2A, t_r=0.5us, T_j=25C

t_gt

2.0

-

t_q

-

15

-

ms

I_TM=1000A, t_p=1000us, di/dt=60A/us, V_r=50V, V_dr=80%V_DRM, dV_dr/dt=20V/us

I_rm

-

A

I_TM=4000A, t_p=2000us, di/dt=60A/us

Symbol

Min.

Max.

Typ.

Units

Conditions

T_j

-40

+125

^oC

T_stg

-40

+150

^oC

R_Q (j-c)

-

-

K/kW

Double sided cooled

Single sided cooled

R_Q (c-s)

-

-

K/kW

Double sided cooled *

Single sided cooled *

R_Q (j-s)

24

48

K/kW

Double sided cooled

Single sided cooled

F

19

25

-

kN

W

-

Kg

about

Symbol

Min.

Max.

Typ.

Units

Conditions

I_T(AV)

1300

A

Sinewave,180^o conduction,T_c=65^oC

I_TRMS

2000

A

Nominal value

I_TSM

20000

18000

A

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I²t

1.7x10⁶

A²s

8.3 msec and 10.0 msec

I_L

800

mA

V_D = 24 V; R_L= 12 ohms

I_H

400

mA

V_{D =} 24 V; I = 2.5 A

V_TM

1.75

V

I_TM = 3000 A; Duty cPSTCle £ 0.01%

di/dt

600

A/ms

Switching from V_DRM£ 1000 V,

non-repetitive

di/dt

200

A/ms

Switching from V_DRM£ 1000 V

Symbol

Min.

Max.

Typ.

Units

Conditions

P_GM

200

W

t_p = 40 us

P_G(AV)

5

W

I_GM

10

A

I_GT

300

150

125

mA

mA

mA

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +125^oC

V_GT

0.30

5

3

V

V

V

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC

V_D = Rated V_DRM; R_L = 1000 ohms;

T_j = + 125 ^oC

V_GRM

5

V

Symbol

Min.

Max.

Typ.

Units

Conditions

t_d

1.5

0.7

ms

I_TM = 50 A; V_D = Rated V_DRM

Gate pulse: V_G = 20 V; R_G = 20 ohms; t_r = 0.1 ms; t_p = 20 ms

t_q

250

150

ms

I_TM = 1000 A; di/dt = 25 A/ms;

V_R³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% V_DRM; V_G = 0;

T_j = 125 ^oC; Duty cPSTCle ³ 0.01%

Q_rr

*

mC

I_TM = 1000 A; di/dt = 25 A/ms;

V_R³ -50 V

Symbol

Min.

Max.

Typ.

Units

Conditions

T_j

-40

+125

^oC

T_stg

-40

+150

^oC

R_Q (j-c)

0.025

0.050

^oC/W

Double sided cooled

Single sided cooled

R_Q (c-s)

0.010

0.020

^oC/W

Double sided cooled *

Single sided cooled *

P

24.5

26.7

kN

W

460

g

Thyristor

Ratings

Symbol

Definition

Conditions

min.

typ.

max.

Unit

V EQ \F(RSM,DSM)

max. non-repetitive reverse/forward blocking voltage

T_J = 25°C

1900

V

V EQ \F(RRM,DRM)

max. repetitive reverse/forward blocking voltage

T_J = 25°C

1800

V

V_T

On-state voltage

I_T=2200 A

T_J = 25°C

1.85

V

I_T(AV)

average forward current

T_C=25°C

1000

A

I_T(RMS)

RMS forward current

180° sine

2300

A

R_thJC

thermal resistance junction to case

K/W

R_thCH

thermal resistance case to heatsink

K/W

R_thJK

thermal resistance junction to heatsink

0.024

K/W

I_TSM

max. forward surge current

t = 10 ms; (50 Hz), sine

T_J = 25°C

12.1

kA

I²t

value for fusing

t = 10 ms; (50 Hz), sine

T_J = 25°C

732

kA²s

di/dt

Rate of rise of on-state current

T_J = 125°C; f = 50 Hz

t_P=200µs;di_G/dt=0.15A/µs;

I_G=0.15A;V_D=V_DRM

repetitive

200

A/µs

non-repet

400

A/µs

dv/dt

Maximum linear rate of rise of off-state voltage

V_D= V_DRM

R_GK =∞; method 1 (linear voltage rise)

T_J = 125°C

200

V/µs

V_GT

gate trigger voltage

V_D = 6V

T_J = 25°C

3.0

V

I_GT

gate trigger current

V_D = 6V

T_J = 25°C

300

mA

I_L

latching current

T_J = 25°C

A

I_H

holding current

T_J = 25°C

500

mA

t_gd

gate controlled delay time

T_J = 25°C

1.0

1.5

µs

t_q

Turn-off time

V_R=10 V; I_T=20A; V_D=V_DRM

T_J = 150°C

600

650

µs

T_stg

storage temperature

-40

125

°C

T_J

virtual junction temperature

-40

125

°C

W_t

Weight

g

F

mounting force

19

29

kN

Symbol

Min.

Max.

Typ.

Units

Conditions

I_T(AV)

1275

A

T_c=55^oC

I_TRMS

1870

A

Nominal value

I_TSM

21400

18900

A

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I²t

2.66x10⁶

A²s

8.3 msec and 10.0 msec

I_L

1000

mA

V_D = 24 V; R_L= 12 ohms

I_H

500

mA

V_{D =} 24 V; I = 2.5 A

V_TM

1.90

V

I_TM = 2000 A; Duty cPSTCle £ 0.01%

di/dt

1000

A/ms

Switching from V_DRM£ 1000 V,

non-repetitive

Symbol

Min.

Max.

Typ.

Units

Conditions

P_GM

200

W

t_p = 40 us

P_G(AV)

5

W

I_GM

10

A

I_GT

300

150

125

mA

mA

mA

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +125^oC

V_GT

0.30

5

3

V

V

V

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC

V_D = Rated V_DRM; R_L = 1000 ohms;

T_j = + 125 ^oC

V_GRM

5

V

Symbol

Min.

Max.

Typ.

Units

Conditions

t_d

1.5

0.7

ms

I_TM = 500 A; V_D = Rated V_DRM

Gate pulse: V_G = 20 V; R_G = 20 ohms; t_r = 0.1 ms; t_p = 20 ms

t_q

40

ms

I_TM = 1000 A; di/dt = 25 A/ms;V_R³ -50 V; Re-applied dV/dt = 200 V/ms linear to 80% V_DRM; V_G = 0;

T_j = 125 ^oC; Duty cPSTCle ³ 0.01%

Q_rr

*

2000

mC

I_TM = 1000 A; di/dt = 25 A/ms;V_R³ -50 V

Symbol

Min.

Max.

Typ.

Units

Conditions

T_j

-40

+125

^oC

T_stg

-40

+150

^oC

R_Q (j-c)

0.023

0.046

^oC/W

Double sided cooled

Single sided cooled

R_Q (j-c)

0.010

0.020

^oC/W

Double sided cooled *

Single sided cooled *

P

19.5

21

kN

VRRM (1)

VDRM (1)

VRSM (1)

10

2400/2800

10

Repetitive peak reverse leakage and off state leakage

I_{RRM /} I_DRM

5 mA

40 mA (3)

Critical rate of voltage rise (4)

dV/dt

1000 V/msec

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

I_T(AV)

341

A

Sinewave,180^o conduction,T_c =85^oC

RMS value of on-state current

I_TRMS

1040

A

Nominal value

Peak one cycle surge

(non repetitive) current

I_TSM

-

5700

A

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I square t

I²t

1.5

KA²s

8.3 msec and 10.0 msec

Latching current

I_L

-

mA

V_D = 24 V; R_L= 12 ohms

Holding current

I_H

1000

mA

V_{D =} 24 V; I =2.5 A

Peak on-state voltage

V_TM

2.45

V

I_TM = 1000 A; Duty cycle £ 0.01%

Critical rate of rise of on-state

current (5, 6)

di/dt

2000

A/ms

Switching from V_DRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

1000

A/ms

Switching from V_DRM £ 1000 V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

P_GM

30

W

t_p = 40 us

Average gate power dissipation

P_G(AV)

10

W

Peak gate current

I_GM

-

A

Gate current required to trigger all units

I_GT

400

mA

mA

mA

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +125^oC

Gate voltage required to trigger all units

V_GT

-

3

V

V

V

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC

V_D = Rated V_DRM; R_L = 1000 ohms;

T_j = + 125 ^oC

Peak negative voltage

V_GRM

-

V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

t_d

1

ms

I_TM =50 A; V_D = Rated V_DRM

Gate pulse: V_G = 20 V; R_G = 20 ohms; t_r= 0.1 ms; t_p = 20 ms

Turn-off time (with V_R = -50 V)

t_q

-

-

55

ms

I_TM =500 A; di/dt =25 A/ms;

V_R ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% V_DRM; V_G = 0;

T_j = 125 ^oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Q_rr

*

mC

I_TM =500 A; di/dt =25 A/ms;

V_R ³ -50 V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

T_j

-40

+125

^oC

Storage temperature

T_stg

-40

+150

^oC

Thermal resistance - junction to case

R_Q (j-c)

-

-

K/KW

Double sided cooled *

Single sided cooled *

Thermal resistamce - case to

sink

R_Q (c-s)

-

-

K/KW

Double sided cooled *

Single sided cooled *

Thermal resistance - junction to sink

R_Q (j-s)

50

100

K/KW

Double sided cooled *

Single sided cooled *

Mounting force

P

5

9

-

kN

Weight

W

-

g

Symbol

Parameter

Value

Unit

I_T(RMS)

Rms on-state current(full sine wave)

24

A

I_TSM

Current (T_j=25,tp=20ms)

240

A

I²t

I²t for fusing(tp=10ms)

200

A²S

IGM

Peak gate current

5

A

VGM

Peak gate voltage

16

V

PGM

Peak gate power

40

W

PG(AV)

Average gate power

1

W

dIT/dt

50

A/μs

IV

50

Tstg

Tj

Storage temperature

Operating junction temperature

-40--+150

-40--+125

Symbol

Parameter

Condition

Type

Unit

Rth j-c

Thermal Resistance,Junction to case

One cycle

BTA

2.1

BTB

Rth j-a

Thermal Resisatance,Junction to ambient

----

--

60

Symbol

Conditions

Type

Max

Unit

I_GT

BTB24

V_D=12V I_T=0.1A

T2+ G+

T2+ G-

T2- G-

11

15

20

18

30

30

mA

mA

mA

I_H

V_D=12V I_GT=0.1A

50

mA

V_TM

I_T=24A

-1.25-

1.5

V

I _DRM

V _DRM=800V

10

μA

I_RRM

V_RRM=800V

15

μA

V_GT

V_D=12V I_T=0.1A

Tj=125

--

1.5

V

I_D

V_D=V_DRM(_MAX)

Tj=125

--

0.5

mA

Symbol

Test Conditions

Type

Min

Max

Unit

dV/dt

V_DM=67%V_Dm(_MAX)

Tj=125

500

250

--

V/μs

(dV/dt)c

(dI/dt)c=7A/ms Tj=125

--

10

μs

Symbol

Parameter

Values

Units

Test Conditions

ON-STATE

I_TAV

Mean on-state current

350

A

Sinewave,180° conduction,Tc=85

I_TRMS

RMS value of on-state current

550

A

Nominal value

I_TSM

Peak one cycle surge

(non repetitive) current

9.1

KA

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I²t

I square t

416

KA²s

8.3 msec and 10.0 msec

I_L

Latching current

-

mA

V_D = 24 V; R_L= 12 ohms

I_H

Holding current

-

mA

V_{D =} 24 V; I = 2.5 A

V_TM

Peak on-state voltage

1.4

V

I_TM = 625 A; Duty cycle £ 0.01%

di/dt

Critical rate of rise

of on-state current

non-repetitive

800

A/ms

Gate drive 20V, 20Ω, t_r≤1μs, T_j=T_jmax, anode voltage≤80% V_DRM

repetitive

150

BLOCKING

V_DRM

V_RRM

Repetitive peak off state voltage

Repetitive peak reverse voltage

1200

V

V_DSM

V_RSM

Non repetitive peak off state voltage

Non repetitive peak reverse voltage

1300

V

I_DRM

I_RRM

Repetitive peak off state current Repetitive peak reverse current

30

mA

T_j = 125 ^oC ,V_RRM V_DRM applied

dV/dt

Critical rate of voltage rise

1000

V/ms

T_J=T_Jmax, linear to 80% rated V_DRM

TRIGGEING

P_G(AV)

Average gate power dissipation

3

W

P_GM

Peak gate power dissipation

16

W

I_GM

Peak gate current

-

A

I_GT

Gate trigger current

150

mA

T_C = 25 ^oC

V_GT

Gate trigger voltage

3.0

V

T_C = 25 ^oC

V_GD

Gate non-trigger voltage

0.15

V

T_j = 125 ^oC

SWITCHING

t_q

Turn-off time

150

ms

I_TM=550A, T_J=T_Jmax, di/dt=40A/μs,

V_R=50V, dv/dt=20V/μs, Gate 0V 100Ω, t_p=500μs

t_d

Delay time

-

Gate current A, di/dt=40A/μs,

V_d=0.67%V_DRM, T_J=25 ^oC

Q_rr

Reverse recovery charge

-

Symbol

Parameter

Values

Units

Test Conditions

T_j

Operating temperature

-40~125

^oC

T_stg

Storage temperature

-40~150

^oC

R _{th (j-c)}

Thermal resistance - junction to case

0.1

^oC/W

DC operation ,Single sided cooled

R _{th (c-s)}

Thermal resistance - case to sink

0.05

^oC/W

Single sided cooled

P

Mounting force

3.5

Nm

W

Weight

-

g

about

Symbol

Parameter

Values

Units

Test Conditions

T_j

Operating temperature

-40~125

°C

T_stg

Storage temperature

-40~150

°C

R _{th (j-c)}

Thermal resistance - junction to case

0.4

°C/W

DC operation ,Single sided cooled

R _{th (c-s)}

Thermal resistance - case to sink

0.08

°C/W

Single sided cooled

P

Mounting force

-

Nm

W

Weight

-

g

about

Symbol

Parameter

Values

Units

Test Conditions

ON-STATE

I_TAV

Mean on-state current

-

A

Sinewave,180° conduction,Tc=100°C

I_TRMS

RMS value of on-state current

100

A

Nominal value

I_TSM

Peak one cycle surge

(non repetitive) current

900

A

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 °C

I²t

I square t

4050

A²s

8.3 msec and 10.0 msec

I_L

Latching current

100

mA

V_D = 12 V; R_L= 12 ohms

I_H

Holding current

30

mA

V_D = 12 V; I = 1 A

V_TM

Peak on-state voltage

2.0

V

I_TM = 150 A; Duty cycle £ 0.01%;

T_j = 25 °C

di/dt

Critical rate of rise

of on-state current

non-repetitive

300

A/ms

Gate drive 20V, 20Ω, t_r≤1μs, T_j=T_jmax, anode voltage≤80% V_DRM

repetitive

50

BLOCKING

V_DRM

V_RRM

Repetitive peak off state voltage

Repetitive peak reverse voltage

600

V

V_DSM

V_RSM

Non repetitive peak off state voltage

Non repetitive peak reverse voltage

700

V

I_DRM

I_RRM

Repetitive peak off state current Repetitive peak reverse current

10

mA

T_j = 125 °C ,V_RRM V_DRM applied

dV/dt

Critical rate of voltage rise

100

V/ms

T_J=T_Jmax, linear to 80% rated V_DRM

TRIGGEING

P_G(AV)

Average gate power dissipation

-

W

P_GM

Peak gate power dissipation

-

W

I_GM

Peak gate current

-

A

I_GT

Gate trigger current

200

mA

T_C = 25 °C

V_GT

Gate trigger voltage

3.0

V

T_C = 25 °C

V_T(T0)

Treshold voltage

1

V

r_T

Slope resistance

2.4

mΩ

V_GD

Gate non-trigger voltage

0.2

V

T_j = 125 °C

SWITCHING

t_q

Turn-off time

-

ms

T_j = 125 °C

t_d

Delay time

-

Gate current 1A, di/dt=1A/μs,

V_d=0.67%V_DRM, T_J=25 °C

Q_rr

Reverse recovery charge

-