Power Thyristor


KK1000A Fast KK Converter Thyristor
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Product Details

Product Code YZPST-KK1000A2000V
Payment Terms L/C, T/T, Other
Delivery Time 30 Days
Incoterm FOB,CFR,CIF
Productivity 100
Transportation Ocean,Air
Supply Ability 500
HS Code 85413000
Brand YZPST
Place of Origin China
Certificate ISO9001-2008,ROHS
Port Shanghai

Detail 01

Critical rate of rise of on-state

current (5, 6)

di/dt

 

800

 

A/ms

Switching from VDRM£ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

 

200

 

A/ms

Switching from VDRM£ 1000 V

 


Detail 02

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

 

1000

 

A

Sinewave,180o conduction,Tc=80oC

RMS value of on-state current

ITRMS

 

1570

 

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

 

ITSM

 

-

 

18500

 

A

 

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

1.66x106

 

A2s

8.3 msec and 10.0 msec

Latching current

IL

 

-

 

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

 

-

 

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

 

1.45

 

V

ITM = 1000 A; Duty Cycle £ 0.01%; Tj =1 25 oC

 

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

100

 

W

t= 40 us

Average gate power dissipation

PG(AV)

 

5

 

W

 

Peak gate current

IGM

 

-

 

A

 

Gate current required to trigger all units

IGT

 

-

120

-

 

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

 

 

VGT

 

-

3.0

-

 

 

V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;Tj = + 125 oC

Peak negative voltage

VGRM

 

20

 

V

 

 

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

 

-

0.7

ms

ITM = 50 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

 

-

50

ms

ITM = 1000 A; di/dt = 25 A/ms;

VR³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0;Tj = 125 oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Qrr

 

*

 

mC

ITM = 1000 A; di/dt = 25 A/ms;

VR³ -50 V

 

 

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

 

oC

 

Storage temperature

Tstg

-40

+125

 

oC

 

Thermal resistance - junction to case

RQ (j-c)

 

0.023

-

 

oC/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)

 

0.0075

-

 

oC/W

Double sided cooled *

Single sided cooled *

 

Mounting force

P

22.2

26.6

 

kN

 

Weight

W

 

 

-

g

About

 


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KK4000 Fast Switch Thyristor
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Product Details

Product Code YZPST-KK4000A2500V
Payment Terms L/C, T/T, Other
Delivery Time 30 Days
Incoterm FOB,CFR,CIF
Productivity 100
Transportation Ocean,Air
Supply Ability 500
Brand YZPST
HS Code 85413000
Place of Origin China
Port Shanghai
Certificate ISO9001-2008

Details

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

 

4000

 

A

Sinewave,180o conduction,Tc=70oC

RMS value of on-state current

ITRMS

 

4900

 

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

ITSM

 

55000

 

52000

 

A

 

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

5.5x106

 

A2s

8.3 msec

 

Latching current

IL

 

1000

 

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

 

500

 

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

 

2.30

 

V

ITM = 3000 A;

Critical rate of rise of on-state

current (5, 6)

di/dt

 

800

 

A/ms

Switching from VDRM£ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

 

300

 

A/ms

Switching from VDRM£ 1000 V

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

200

 

W

t= 40 us

Average gate power dissipation

PG(AV)

 

5

 

W

 

Peak gate current

IGM

 

20

 

A

 

Gate current required to trigger all units

IGT

 

300

200

125

 

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

 

 

VGT

0.30

5

4

 

 

V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM

 

20

 

V

 

 

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

 

2.0

 

ms

ITM = 50 A; VD = 67% VDRM

Gate pulse: VG = 30 V; RG = 10 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -5 V)

tq

 

80

 

ms

ITM > 2000 A; di/dt = 25 A/ms;

VR³ -5 V; Re-applied dV/dt = 400 V/ms linear to 67% VDRM ;

Tj = 125 oC; Duty cPSTCle ³ 0.01%

Reverse recovery current

Irr

 

200

 

A

ITM > 2000 A; di/dt = 25 A/ms;

VR³ -50 V; Tj = 125 oC

 

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

 

oC

 

Storage temperature

Tstg

-40

+150

 

oC

 

Thermal resistance - junction to case

RQ (j-c)

 

0.012

 

 

oC/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)

 

0.002

 

 

oC/W

Double sided cooled *

Single sided cooled *

Mounting force

P

10000

12000

 

 

lb.

kN

 

Weight

W

 

 

3.5

1.60

Lb.

Kg.

 

 


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KP800A Disc Thyristor
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Product Details

Product Code YZPST-KP800A 1800V
Payment Terms L/C, T/T, Other
Delivery Time 30 Days
Incoterm FOB,CFR,CIF
Productivity 100
Transportation Ocean,Air
Supply Ability 1000
HS Code 85413000
Brand YZPST
Place of Origin China
Port Shanghai
Certificate ISO9001-2008,ROHS

Details

Thyristor

Ratings

Symbol

Definition

Conditions

 

min.

typ.

max.

Unit

V EQ \F(RSM,DSM)

max. non-repetitive reverse/forward blocking voltage

TJ = 25°C

 

 

1900

V

V EQ \F(RRM,DRM)

max. repetitive reverse/forward blocking voltage

TJ = 25°C

 

 

1800

V

VT

On-state voltage

IT=1500 A

TJ = 25°C

 

 

1.70

V

IT(AV)

average forward current

TC=25°C

 

 

 

800

A

IT(RMS)

RMS forward current

180° sine

 

 

 

2214

A

RthJC

thermal resistance junction to case

 

 

 

 

 

K/W

RthCH

thermal resistance case to heatsink

 

 

 

 

 

K/W

RthJK

thermal resistance junction to heatsink

 

 

 

 

0.032

K/W

ITSM

max. forward surge current

t = 10 ms; (50 Hz), sine

TJ = 25°C

 

 

12.7

kA

I²t

value for fusing

t = 10 ms; (50 Hz), sine

TJ = 25°C

 

 

806

kA²s

di/dt

Rate of rise of on-state current

TJ = 125°C; f = 50 Hz

tP=200µs;diG/dt=0.15A/µs;

IG=0.15A;VD=VDRM

repetitive

 

 

500

A/µs

non-repet

 

 

1000

A/µs

dv/dt

Maximum linear rate of rise of off-state voltage

VD= VDRM

RGK =∞; method 1 (linear voltage rise)

TJ = 125°C

 

 

1000

V/µs

VGT

gate trigger voltage

VD = 6V

TJ = 25°C

 

 

3.0

V

IGT

gate trigger current

VD = 6V

TJ = 25°C

 

 

300

mA

IL

latching current

 

TJ = 25°C

 

 

 

A

IH

holding current

 

TJ = 25°C

 

 

500

mA

tgd

gate controlled delay time

 

T= 25°C

 

 

2.5

µs

tq

Turn-off time

VR=10 V; IT=20A; VD=VDRM

TJ = 150°C

 

200

400

µs

Tstg

storage temperature

 

 

-40

 

125

°C

TJ

virtual junction temperature

 

 

-40

 

125

°C

Wt

Weight

 

 

 

 

 

g

F

mounting force

 

 

10

 

20

kN


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1200V Power Thyristor
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Product Details

Product Code YZPST-R220CH12FJO
Payment Terms L/C, T/T, Other
Delivery Time 30 Days
Certificate ISO9001-2008,ROHS
Incoterm FOB,CFR,CIF
Productivity 100
Transportation Ocean,Air
Supply Ability 500
HS Code 85413000
Brand YZPST
Place of Origin China
Port Shanghai

Detail 01

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

15 mA

70 mA (3)

Critical rate of voltage rise

dV/dt (4)

200 V/msec


Detail 02

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Max. average value of on-state current

IT(AV)M

 

964

 

A

Sinewave,180o conduction,Tc=55oC

RMS value of on-state current

IT(RMS)m

 

1971

 

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

 

ITSM

 

-

 

9.4

 

kA

 

kA

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

442x103

 

A2s

8.3 msec

Latching current

IL

 

-

 

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

 

1000

 

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

 

1.96

 

V

ITM = 1400 A

Critical rate of rise of on-state

current (5, 6)

di/dt

 

1500

 

A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

 

1000

 

A/ms

Switching from VDRM £ 1000 V

 

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

30

 

W

 

Average gate power dissipation

PG(AV)

 

2

 

W

 

Peak gate current

IGM

 

-

 

A

 

Gate current required to trigger all units

IGT

 

300

 

mA

VD = 10 V;IT=3A;Tj = +25 oC

 

Gate voltage required to trigger all units

 

 

VGT

 

3.0

 

V

 

VD = 10 V;IT=3A;Tj = +25 oC

 

Peak negative voltage

VRGM

 

5

 

V

 

 

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

tgd

 

1.0

-

ms

VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C

Turn-on time

tgt

 

2.0

-

 

Turn-off time (with VR = -5 V)

tq

-

-

25

ms

ITM=1000A, tp=1000us, di/dt=60A/us, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/us

Reverse recovery current

Irm

 

-

 

A

ITM=4000A, tp=2000us, di/dt=60A/us

 

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

 

oC

 

Storage temperature

Tstg

-40

+150

 

oC

 

Thermal resistance - junction to case

RQ (j-c)

 

-

-

 

K/kW

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)

 

-

-

 

K/kW

Double sided cooled *

Single sided cooled *

Thermal resistance - junction to case

RQ (j-s)

 

32

64

 

K/kW

Double sided cooled

Single sided cooled

Mounting force

F

10

20

-

kN

 

Weight

W

 

 

-

Kg

about


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1200V Promotion Power Thyristor
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Product Details

Product Code YZPST-R1271NS12C
Payment Terms L/C, T/T, Other
Delivery Time 30 Days
Productivity 100
Transportation Ocean,Air
HS Code 85413000
Supply Ability 500
Place of Origin CHINA
Brand YZPST
Certificate ISO9001-2008,ROHS
Port SHANGHAI
Incoterm FOB,CFR,CIF

Detail 01

VRRM (1)

VDRM (1)

VRSM (1)

1200

1200

1300

 

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

20 mA

150mA (3)

Critical rate of voltage rise

dV/dt (4)

200 V/msec


Detail 02

Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Max. average value of on-state current

IT(AV)M

 

1271

 

A

Sinewave,180o conduction,Tc=55oC

RMS value of on-state current

IT(RMS)m

 

2599

 

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

 

ITSM

 

-

 

18.0

 

kA

 

kA

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

1.62x106

 

A2s

8.3 msec

Latching current

IL

 

-

 

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

 

1000

 

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

 

2.02

 

V

ITM = 2000 A

Critical rate of rise of on-state

current (5, 6)

di/dt

 

1500

 

A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

 

1000

 

A/ms

Switching from VDRM £ 1000 V

 

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

30

 

W

 

Average gate power dissipation

PG(AV)

 

2

 

W

 

Peak gate current

IGM

 

-

 

A

 

Gate current required to trigger all units

IGT

 

300

 

mA

VD = 10 V;IT=3A;Tj = +25 oC

 

Gate voltage required to trigger all units

 

 

VGT

 

3.0

 

V

 

VD = 10 V;IT=3A;Tj = +25 oC

 

Peak negative voltage

VRGM

 

5

 

V

 

 

 

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

tgd

 

1.0

-

ms

VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C

Turn-on time

tgt

 

2.0

-

 

Turn-off time (with VR = -5 V)

tq

-

15

-

ms

ITM=1000A, tp=1000us, di/dt=60A/us, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/us

Reverse recovery current

Irm

 

-

 

A

ITM=4000A, tp=2000us, di/dt=60A/us

 

 

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

 

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

 

oC

 

Storage temperature

Tstg

-40

+150

 

oC

 

Thermal resistance - junction to case

RQ (j-c)

 

-

-

 

K/kW

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)

 

-

-

 

K/kW

Double sided cooled *

Single sided cooled *

Thermal resistance - junction to case

RQ (j-s)

 

24

48

 

K/kW

Double sided cooled

Single sided cooled

Mounting force

F

19

25

-

kN

 

Weight

W

 

 

-

Kg

about


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DCR 1004 Phase Control Power Thyristor
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Product Details

Product Code YZPST-DCR1004
Port SHANGHAI
Payment Terms L/C, T/T, Other
Delivery Time 30 Days
Brand YZPST
Certificate ISO9000
Transportation Ocean,Air
Voltage 2200V
Incoterm FOB,CFR,CIF
Condition New

Details

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

 

1300

 

A

Sinewave,180o conduction,Tc=65oC

RMS value of on-state current

ITRMS

 

2000

 

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

 

ITSM

 

20000

 

18000

 

A

 

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

1.7x106

 

A2s

8.3 msec and 10.0 msec

Latching current

IL

 

800

 

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

 

400

 

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

 

1.75

 

V

ITM = 3000 A; Duty cPSTCle £ 0.01%

Critical rate of rise of on-state

current (5, 6)

di/dt

 

600

 

A/ms

Switching from VDRM£ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

 

200

 

A/ms

Switching from VDRM£ 1000 V

 

 

ELECTRICAL CHARACTERISTICS AND RATINGS (cont`d)

Gating

 

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

200

 

W

t= 40 us

Average gate power dissipation

PG(AV)

 

5

 

W

 

Peak gate current

IGM

 

10

 

A

 

Gate current required to trigger all units

IGT

 

300

150

125

 

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

 

 

VGT

 

 

0.30

5

3

 

 

V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM

 

5

 

V

 

 

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

 

1.5

0.7

ms

ITM = 50 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

 

250

150

ms

ITM = 1000 A; di/dt = 25 A/ms;

VR³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0;

Tj = 125 oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Qrr

 

*

 

mC

ITM = 1000 A; di/dt = 25 A/ms;

VR³ -50 V

* For guaranteed max. value, contact factory.

 

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

 

oC

 

Storage temperature

Tstg

-40

+150

 

oC

 

Thermal resistance - junction to case

RQ (j-c)

 

0.025

0.050

 

oC/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)

 

0.010

0.020

 

oC/W

Double sided cooled *

Single sided cooled *

Mounting force

P

24.5

26.7

 

kN

 

Weight

W

 

 

460

g

 


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1000A Diffused Structure Thyristor
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Product Details

Product Code YZPST-KP1000A1800V
Port SHANGHAI
Payment Terms L/C, T/T, Other
Delivery Time 30 Days
Incoterm FOB,CFR,CIF
Transportation Ocean,Air
Productivity 100
Supply Ability 500
HS Code 85413000
Brand YZPST
Certificate ISO9001-2008

Details

Thyristor

Ratings

Symbol

Definition

Conditions

 

min.

typ.

max.

Unit

V EQ \F(RSM,DSM)

max. non-repetitive reverse/forward blocking voltage

TJ = 25°C

 

 

1900

V

V EQ \F(RRM,DRM)

max. repetitive reverse/forward blocking voltage

TJ = 25°C

 

 

1800

V

VT

On-state voltage

IT=2200 A

TJ = 25°C

 

 

1.85

V

IT(AV)

average forward current

TC=25°C

 

 

 

1000

A

IT(RMS)

RMS forward current

180° sine

 

 

 

2300

A

RthJC

thermal resistance junction to case

 

 

 

 

 

K/W

RthCH

thermal resistance case to heatsink

 

 

 

 

 

K/W

RthJK

thermal resistance junction to heatsink

 

 

 

 

0.024

K/W

ITSM

max. forward surge current

t = 10 ms; (50 Hz), sine

TJ = 25°C

 

 

12.1

kA

I²t

value for fusing

t = 10 ms; (50 Hz), sine

TJ = 25°C

 

 

732

kA²s

di/dt

Rate of rise of on-state current

TJ = 125°C; f = 50 Hz

tP=200µs;diG/dt=0.15A/µs;

IG=0.15A;VD=VDRM

repetitive

 

 

200

A/µs

non-repet

 

 

400

A/µs

dv/dt

Maximum linear rate of rise of off-state voltage

VD= VDRM

RGK =∞; method 1 (linear voltage rise)

TJ = 125°C

 

 

200

V/µs

VGT

gate trigger voltage

VD = 6V

TJ = 25°C

 

 

3.0

V

IGT

gate trigger current

VD = 6V

TJ = 25°C

 

 

300

mA

IL

latching current

 

TJ = 25°C

 

 

 

A

IH

holding current

 

TJ = 25°C

 

 

500

mA

tgd

gate controlled delay time

 

T= 25°C

 

1.0

1.5

µs

tq

Turn-off time

VR=10 V; IT=20A; VD=VDRM

TJ = 150°C

 

600

650

µs

Tstg

storage temperature

 

 

-40

 

125

°C

TJ

virtual junction temperature

 

 

-40

 

125

°C

Wt

Weight

 

 

 

 

 

g

F

mounting force

 

 

19

 

29

kN


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R1275 Power Inverter Thyristor
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Product Details

Product Code YZPST-R1275NS21L
Port Shanghai
Payment Terms L/C, T/T, Other
Delivery Time 30 Days
Incoterm FOB,CFR,CIF
Productivity 100
Transportation Ocean,Air
Supply Ability 1000
HS Code 85413000
Brand YZPST
Certificate ISO9001-2008,ROHS

Details

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

 

1275

 

A

Tc=55oC

RMS value of on-state current

ITRMS

 

1870

 

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

 

ITSM

 

21400

 

18900

 

A

 

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

2.66x106

 

A2s

8.3 msec and 10.0 msec

Latching current

IL

 

1000

 

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

 

500

 

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

 

1.90

 

V

ITM = 2000 A; Duty cPSTCle £ 0.01%

Critical rate of rise of on-state

current (5, 6)

di/dt

 

1000

 

A/ms

Switching from VDRM£ 1000 V,

non-repetitive

 

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

200

 

W

t= 40 us

Average gate power dissipation

PG(AV)

 

5

 

W

 

Peak gate current

IGM

 

10

 

A

 

Gate current required to trigger all units

IGT

 

300

150

125

 

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

 

 

VGT

 

 

0.30

5

3

 

 

V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM

 

5

 

V

 

 

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

 

1.5

0.7

ms

ITM = 500 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

 

40

 

 

ms

ITM = 1000 A; di/dt = 25 A/ms;VR³ -50 V; Re-applied dV/dt = 200 V/ms linear to 80% VDRM; VG = 0;

Tj = 125 oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Qrr

 

*

2000

mC

ITM = 1000 A; di/dt = 25 A/ms;VR³ -50 V

* For guaranteed max. value, contact factory.

 

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

 

oC

 

Storage temperature

Tstg

-40

+150

 

oC

 

Thermal resistance - junction to case

RQ (j-c)

 

0.023

0.046

 

oC/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (j-c)

 

0.010

0.020

 

oC/W

Double sided cooled *

Single sided cooled *

Mounting force

P

19.5

21

 

kN

 


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341A Professional Asymmetric Thyristor
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Product Details

Product Code YZPST-KN341A24
Port Shanghai
Payment Terms L/C, T/T, Other
Delivery Time 30 Days
Incoterm FOB,CFR,CIF
Productivity 100
Transportation Ocean,Air
Supply Ability 500
HS Code 85413000
Brand YZPST
Certificate ISO9001-2008,ROHS

VRRM (1)

VDRM (1)

VRSM (1)

10

2400/2800

10

 

 

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

 

 

5 mA

40 mA (3)

Critical rate of voltage rise (4)

dV/dt

1000 V/msec

 

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

 

341

 

A

Sinewave,180o conduction,Tc =85oC

RMS value of on-state current

ITRMS

 

1040

 

A

Nominal value

Peak one cycle surge

(non repetitive) current

 

ITSM

 

-

 

5700

 

A

 

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

1.5

 

KA2s

8.3 msec and 10.0 msec

Latching current

IL

 

-

 

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

 

1000

 

mA

VD = 24 V; I =2.5 A

Peak on-state voltage

VTM

 

2.45

 

V

ITM = 1000 A; Duty cycle £ 0.01%

 

Critical rate of rise of on-state

current (5, 6)

di/dt

 

2000

 

A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

 

1000

 

A/ms

Switching from VDRM £ 1000 V

 

ELECTRICAL CHARACTERISTICS AND RATINGS

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

30

 

W

t= 40 us

Average gate power dissipation

PG(AV)

 

10

 

W

 

Peak gate current

IGM

 

-

 

A

 

Gate current required to trigger all units

IGT

 

 

400

 

 

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

 

 

VGT

 

 

 

-

3

 

 

V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM

 

-

 

V

 

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

 

 

1

ms

ITM =50 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr= 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

-

-

55

ms

ITM =500 A; di/dt =25 A/ms;

VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0;

Tj = 125 oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Qrr

 

*

 

mC

ITM =500 A; di/dt =25 A/ms;

VR ³ -50 V

* For guaranteed max. value, contact factory.

 

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

 

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

 

oC

 

Storage temperature

Tstg

-40

+150

 

oC

 

Thermal resistance - junction to case

RQ (j-c)

 

 

 

-

-

K/KW

Double sided cooled *

Single sided cooled *

Thermal resistamce - case to

sink

RQ (c-s)

 

 

-

-

K/KW

Double sided cooled *

Single sided cooled *

Thermal resistance - junction to sink

RQ (j-s)

 

 

50

100

K/KW

Double sided cooled *

Single sided cooled *

Mounting force

P

5

9

-

kN

 

Weight

W

 

 

-

g


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165A Inverter Thyristor
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Product Details

Product Code YZPST-KK165-600
Port Shanghai
Payment Terms L/C, T/T, Other
Delivery Time 30 Days
Incoterm FOB,CFR,CIF
Productivity 1000
Transportation Ocean,Air
Supply Ability 10000
HS Code 85413000
Brand YZPST
Certificate ISO9001-2008,ROHS

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AC Power Triac
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Product Details

Product Code YZPST-BTB24
Port Shanghai
Payment Terms L/C, T/T, Other
Delivery Time 30 Days
Incoterm FOB,CFR,CIF
Productivity 1000
Transportation Ocean,Air
Supply Ability 10000
Brand YZPST
Certificate ISO9001-2008,ROHS
HS Code 85413000

Details

Symbol

Parameter

Value

Unit

IT(RMS)

Rms on-state current(full sine wave)

24

A

ITSM

Non- repetitive Peak on-state

Current (Tj=25,tp=20ms)

240

A

I2t

I2t for fusing(tp=10ms)

200

A2S

IGM

Peak gate current

5

A

VGM

Peak gate voltage

16

V

PGM

Peak gate power

40

W

PG(AV)

Average gate power

1

W

dIT/dt

Repetitive rate of rise of on-state current after triggering (IT=6A,IG=0.2A,dlG/dt=0.2A/us)

 

50

A/μs

IV

50

Tstg

Tj

Storage temperature

Operating junction temperature

-40--+150

-40--+125

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Condition

 

Type

Unit

Rth j-c

Thermal Resistance,Junction to case

One cycle

BTA

2.1

 

BTB

   

Rth j-a

Thermal Resisatance,Junction to ambient

----

--

60

 

*Electrical characteristics(Tj=25 unless otherwise stated)

 

Symbol

Conditions

Type

Max

Unit

IGT

 

BTB24

VD=12V IT=0.1A

T2+ G+

T2+ G-

T2- G-

 

 

11

15

20

 

 

18

30

30

 

 

mA

mA

mA

IH

VD=12V IGT=0.1A

 

50

mA

VTM

IT=24A

-1.25-

1.5

V

I DRM

V DRM=800V

 

10

μA

IRRM

VRRM=800V

 

15

μA

VGT

VD=12V IT=0.1A

Tj=125

--

 

1.5

V

ID

VD=VDRM(MAX)

Tj=125

--

0.5

mA

 

*Dynamic characteristics (Tj=25 unless otherwise stated)

Symbol

Test Conditions

Type

Min

Max

Unit

dV/dt

 

VDM=67%VDm(MAX)

Tj=125

500

 

250

 

 

--

 

 

V/μs

(dV/dt)c

(dI/dt)c=7A/ms Tj=125

 

--

 

10

 

 

 

μs


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DCR1020 Phase Control Power Thyristor
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Product Details

Port Shanghai
Payment Terms L/C, T/T, Other
Delivery Time 30 Days
Incoterm FOB,CFR,CIF
Productivity 100
Transportation Ocean,Air
Supply Ability 1000
Brand YZPST
Certificate ISO9001-2008,ROHS
HS Code 85413000

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DC Power Encapsulation Thyristor
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Product Details

Product Code Model No.: YZPST-T700123503BY
Port Shanghai
Payment Terms L/C, T/T, Other
Delivery Time 30 Days
Incoterm FOB,CFR,CIF
Productivity 100
Transportation Ocean,Air
Supply Ability 1000
Brand YZPST
Certificate ISO9001-2008,ROHS
HS Code 85413000

Details

Symbol

Parameter

Values

Units

Test Conditions

ON-STATE

 

 

 

ITAV

Mean on-state current

350

A

Sinewave,180° conduction,Tc=85

ITRMS

RMS value of on-state current

550

A

Nominal value

ITSM

Peak one cycle surge

(non repetitive) current

9.1

KA

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I2t

I square t

416

KA2s

8.3 msec and 10.0 msec

IL

Latching current

-

mA

VD = 24 V; RL= 12 ohms

IH

Holding current

-

mA

VD = 24 V; I = 2.5 A

VTM

Peak on-state voltage

1.4

V

ITM = 625 A; Duty cycle £ 0.01%

 

di/dt

Critical rate of rise

of on-state current

non-repetitive

800

A/ms

Gate drive 20V, 20Ω, tr≤1μs, Tj=Tjmax, anode voltage≤80% VDRM

repetitive

150

BLOCKING

 

 

 

VDRM

VRRM

Repetitive peak off state voltage

Repetitive peak reverse voltage

1200

V

 

VDSM

VRSM

Non repetitive peak off state voltage

Non repetitive peak reverse voltage

1300

V

 

IDRM

IRRM

Repetitive peak off state current Repetitive peak reverse current

30

mA

Tj = 125 oC ,VRRM VDRM applied

dV/dt

Critical rate of voltage rise

1000

V/ms

TJ=TJmax, linear to 80% rated VDRM

TRIGGEING

 

 

 

PG(AV)

Average gate power dissipation

3

W

 

PGM

Peak gate power dissipation

16

W

 

IGM

Peak gate current

-

A

 

IGT

Gate trigger current

150

mA

TC = 25 oC

VGT

Gate trigger voltage

3.0

V

TC = 25 oC

VGD

Gate non-trigger voltage

0.15

V

Tj = 125 oC

SWITCHING

 

 

 

tq

Turn-off time

150

ms

ITM=550A, TJ=TJmax, di/dt=40A/μs,

VR=50V, dv/dt=20V/μs, Gate 0V 100Ω, tp=500μs

 

td

Delay time

-

 

Gate current A, di/dt=40A/μs,

Vd=0.67%VDRM, TJ=25 oC

Qrr

Reverse recovery charge

-

 

 

 

Thermal And Mechanical

Symbol

Parameter

Values

Units

Test Conditions

Tj

Operating temperature

-40~125

oC

 

Tstg

Storage temperature

-40~150

oC

 

R th (j-c)

Thermal resistance - junction to case

0.1

oC/W

DC operation ,Single sided cooled

R th (c-s)

Thermal resistance - case to sink

0.05

oC/W

Single sided cooled

P

Mounting force

3.5

Nm

 

W

Weight

-

g

about

 


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100A Power Control Thyristor
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Product Details

Product Code Model No.: YZPST-TO94-KP100A06
Port Shanghai
Payment Terms L/C, T/T, Other
Delivery Time 30 Days
Incoterm FOB,CFR,CIF
Productivity 100
Transportation Ocean,Air
Supply Ability 1000
Brand YZPST
Certificate ISO9001-2008,ROHS
HS Code 85413000

Detail 01

Symbol

Parameter

Values

Units

Test Conditions

Tj

Operating temperature

-40~125

°C

 

Tstg

Storage temperature

-40~150

°C

 

R th (j-c)

Thermal resistance - junction to case

0.4

°C/W

DC operation ,Single sided cooled

R th (c-s)

Thermal resistance - case to sink

0.08

°C/W

Single sided cooled

P

Mounting force

-

Nm

 

W

Weight

-

g

about


Detail 02

Maximum Ratings And Characteristics

Symbol

Parameter

Values

Units

Test Conditions

ON-STATE

 

 

 

ITAV

Mean on-state current

-

A

Sinewave,180° conduction,Tc=100°C

ITRMS

RMS value of on-state current

100

A

Nominal value

ITSM

Peak one cycle surge

(non repetitive) current

900

A

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 °C

I2t

I square t

4050

A2s

8.3 msec and 10.0 msec

IL

Latching current

100

mA

VD = 12 V; RL= 12 ohms

IH

Holding current

30

mA

V= 12 V; I = 1 A

VTM

Peak on-state voltage

2.0

V

ITM = 150 A; Duty cycle £ 0.01%;

Tj = 25 °C

 

di/dt

Critical rate of rise

of on-state current

non-repetitive

300

A/ms

Gate drive 20V, 20Ω, tr≤1μs, Tj=Tjmax, anode voltage≤80% VDRM

repetitive

50

BLOCKING

 

 

 

VDRM

VRRM

Repetitive peak off state voltage

Repetitive peak reverse voltage

600

V

 

VDSM

VRSM

Non repetitive peak off state voltage

Non repetitive peak reverse voltage

700

V

 

IDRM

IRRM

Repetitive peak off state current Repetitive peak reverse current

10

mA

Tj = 125 °C ,VRRM VDRM applied

dV/dt

Critical rate of voltage rise

100

V/ms

TJ=TJmax, linear to 80% rated VDRM

TRIGGEING

 

 

 

PG(AV)

Average gate power dissipation

-

W

 

PGM

Peak gate power dissipation

-

W

 

IGM

Peak gate current

-

A

 

IGT

Gate trigger current

200

mA

TC = 25 °C

VGT

Gate trigger voltage

3.0

V

TC = 25 °C

VT(T0)

Treshold voltage

1

V

 

rT

Slope resistance

2.4

 

VGD

Gate non-trigger voltage

0.2

V

Tj = 125 °C

SWITCHING

 

 

 

tq

Turn-off time

-

ms

Tj = 125 °C

td

Delay time

-

Gate current 1A, di/dt=1A/μs,

Vd=0.67%VDRM, TJ=25 °C

Qrr

Reverse recovery charge

-

 

 

 


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1600V 25a Phase Control Thyristor
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Product Details

Product Code Model No.: YZPST-25RIA-16
Port Shanghai
Payment Terms L/C, T/T, Other
Delivery Time 30 Days
Incoterm FOB,CFR,CIF
Productivity 100
Transportation Ocean,Air
Supply Ability 1000
Brand YZPST
Certificate ISO9001-2008,ROHS
HS Code 85413000

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