Semiconductor Triac

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Yangzhou Positioning Tech Co., Ltd

3rd Floor, Weiheng Building No.20 B Area, Jiangsu, Yangzhou - 225012, China

Mobile : +86-13805278321, +86-13952528675

Phone : +86-51487782298

Fax : +86-51487782297



Specifications

Incoterm FOB,CFR,CIF
Productivity 1000
Transportation Ocean,Air
Supply Ability 10000
Brand YZPST
Certificate ISO9001-2008,ROHS
Item Code BT139 BT139

Additional Information

Product Code YZPST-BT139
Payment Terms L/C, T/T, Other
Delivery Time 30 Days


Detail 01

Symbol

Value

Unit

IT(RMS)

16

A

VDRM / VRRM

≥600

V

ITSM

140

A


Detail 02

Symbol

Parameter

Value

Unit

IT(RMS)

RMS on-state current(full sine wave)

16

A

ITSM

Non- repetitive Peak on-state

Current (full cycle,Tj=25,F=50Hz,tp=20ms)

140

A

I2t

I2t Value for fusing(tp=10ms)

98

A2S

IGM

Peak gate current

2

A

VGM

 

5

V

PGM

 

5

W

PG(AV)

Average gate power

0.5

W

di/dt

Repetitive rate of rise of on-state current after triggering (IT=6A,IG=0.2A,dIG/dt=0.2A/μs)

 -¡-¢

50

A/μs

£

10

Tstg

Tj

Storage temperature

Operating junction temperature

-40--+150

-40--+125

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Conditions

Min

Type

Max

Unit

Rth j-mb

 

Thermal Resisatance,Junction to mb

One cycle

Half cycle

--

--

--

--

4.0

1.7

K/W

K/W

Rth j-a

Thermal Resisatance,Junction to ambient

--

--

55

--

K/W

Electrical characteristics (Tj=25 unless otherwise stated)

 

Symbol

Test Conditions

Min

Type

Max

Unit

 

IGT

 

VD=12V RL=30Ω

T2+ G+

T2+ G-

T2- G-

 

--

--

--

 

10

15

20

 

10

25

25

 

mA

mA

mA

IH

VD=12V IGT=0.1A

 

6

50

mA

VTM

IT=20A

--

1.3

1.7

V

I DRM

V DRM=520V

 

 

20

μA

IRRM

VRRM=520V

 

 

20

μA

VGT

VD=12V RL=30Ω

 

0.7

1.65

V

ID

VD=VDRM(MAX)

Tj=125

--

0.1

0.5

mA

 

 

 Dynamic characteristics (Tj=25 unless otherwise stated)

Symbol

Test Conditions

Min

Type

Max

Unit

dVD/dt

VDM=67%VDm(MAX)

Tj=125 gate open

50

250

--

V/μs

dVCOM/dt

VDM=400V Tj=95

IT(RMS)=12A

dLCOM/dt=5.4A/ms,gate open

 

-

 

 

-

 

 

10

 

 

20

 

 

--

 

 

V/μs



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