Silicon Power Transistor

Contact Us

Yangzhou Positioning Tech Co., Ltd

3rd Floor, Weiheng Building No.20 B Area, Jiangsu, Yangzhou - 225012, China

Mobile : +86-13805278321, +86-13952528675

Phone : +86-51487782298

Fax : +86-51487782297



Specifications

Incoterm FOB,CFR,CIF
Productivity 1000
Supply Ability 10000
Transportation Ocean,Air
HS Code 85413000
Brand YZPST
Certificate ISO9001-2008,ROHS

Additional Information

Product Code YZPST-1690-TO-247S
Port Shanghai
Payment Terms L/C, T/T, Other
Delivery Time 30 Days


Details

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40-150

 

Operating junction temperature range

Tj

-40-125

 

Repetitive peak off-state voltage

VDRM

1600

V

Repetitive peak reverse voltage

VRRM

1600

V

Average on-state current (TC=80)

IT(AV)

56

A

RMS on-state current(TC=80)

IT(RMS)

90

A

Non repetitive surge peak on-state current

(tp=10ms)

 

ITSM

 

1250

 

A

I2t value for fusing (tp=10ms)

I2t

7800

A2s

Critical rate of rise of on-state current

(IG=2×IGT)

 

dI/dt

 

150

 

A/μs

Peak gate current

IGM

10

A

Peak gate power

PGM

20

W

Average gate power dissipation(Tj=125â��)

PG(AV)

2

W

 

 

ELECTRICAL CHARACTERISTICS (Tj=25 unless otherwise specified)

 

 

 

Symbol

 

 

Test Condition

Value

 

 

Unit

MIN.

TYP.

MAX.

IGT

 

 

VD=12V RL=30Ω

10

-

80

mA

VGT

-

-

1.5

V

VGD

VD=VDRM Tj=125

0.25

-

-

V

IL

 

IG=1.2 IGT

-

-

200

mA

IH

 

IT=1A

-

-

150

mA

dV/dt

VD=2/3VDRM Tj=125 Gate Open

1000

-

-

V/μs

 

 

STATIC CHARACTERISTICS

 

Symbol

Parameter

Value(MAX)

Unit

VTM

ITM=110A tp=380μs

TC=25

1.8

V

IDRM

 

 

VD=VDRM VR=VRRM

TC=25

50

μA

IRRM

TC=125

10

mA

 

 

THERMAL RESISTANCES

 

Symbol

Parameter

Value

Unit

Rth(j-c)

junction to case(DC)



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