Silicon Transistors


Product Details

Product Code YZPST-1690-TO-247S
Port Shanghai
Payment Terms L/C, T/T, Other
Delivery Time 30 Days
Incoterm FOB,CFR,CIF
Productivity 1000
Supply Ability 10000
Transportation Ocean,Air
HS Code 85413000
Brand YZPST
Certificate ISO9001-2008,ROHS

Details

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40-150

 

Operating junction temperature range

Tj

-40-125

 

Repetitive peak off-state voltage

VDRM

1600

V

Repetitive peak reverse voltage

VRRM

1600

V

Average on-state current (TC=80)

IT(AV)

56

A

RMS on-state current(TC=80)

IT(RMS)

90

A

Non repetitive surge peak on-state current

(tp=10ms)

 

ITSM

 

1250

 

A

I2t value for fusing (tp=10ms)

I2t

7800

A2s

Critical rate of rise of on-state current

(IG=2×IGT)

 

dI/dt

 

150

 

A/μs

Peak gate current

IGM

10

A

Peak gate power

PGM

20

W

Average gate power dissipation(Tj=125â��)

PG(AV)

2

W

 

 

ELECTRICAL CHARACTERISTICS (Tj=25 unless otherwise specified)

 

 

 

Symbol

 

 

Test Condition

Value

 

 

Unit

MIN.

TYP.

MAX.

IGT

 

 

VD=12V RL=30Ω

10

-

80

mA

VGT

-

-

1.5

V

VGD

VD=VDRM Tj=125

0.25

-

-

V

IL

 

IG=1.2 IGT

-

-

200

mA

IH

 

IT=1A

-

-

150

mA

dV/dt

VD=2/3VDRM Tj=125 Gate Open

1000

-

-

V/μs

 

 

STATIC CHARACTERISTICS

 

Symbol

Parameter

Value(MAX)

Unit

VTM

ITM=110A tp=380μs

TC=25

1.8

V

IDRM

 

 

VD=VDRM VR=VRRM

TC=25

50

μA

IRRM

TC=125

10

mA

 

 

THERMAL RESISTANCES

 

Symbol

Parameter

Value

Unit

Rth(j-c)

junction to case(DC)


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3A NPN Silicon Transistor
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Product Details

Product Code YZPST-13003DL
Port Shanghai
Payment Terms L/C, T/T, Other
Delivery Time 30 Days
Incoterm FOB,CFR,CIF
Productivity 1000
Transportation Ocean,Air
Supply Ability 10000
Brand YZPST
Certificate ISO9001-2008,ROHS
HS Code 85413000

Detail 01

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

350

V

Collector-Emitter Voltage

VCEO

220

V

Emitter-Base Voltage

VEBO

9

V

Collector Current

IC

3

A

Total Power Dissipation

PC

25

W

Junction Temperature

Tj

150

 

Storage Temperature

Tstg

-55~150

 

 


Detail 02

CHARACTERISTICS

SYMBOL

TEST CONDITION

MIN

MAX

UNIT

Collector-Base Voltage

VCBO

Ic=1mA Ie=0

350

 

V

Collector-Emitter Voltage

VCEO

Ic=1mA Ib=0

220

 

V

Emitter-Base Voltage

VEBO

Ie=1mA Ic=0

9

 

V

Collector-Base Cutoff Current

ICBO

Vcb=350v Ie=0

 

10

UA

Collector-Emitter Cutoff

Current

 

ICEO

 

Vce=220v Ib=0

 

 

10

 

UA

Emitter-Base Cutoff Current

IEBO

Veb=9v Ic=0

 

10

UA

Collector-Emitter Saturation

Voltage

 

Vce(sat)

 

Ic=0.5A Ib=0.1A

 

 

0.9

 

V

Base-Emitter Saturation Voltage

Vbe(sat)

Ic=0.5A Ib=0.1A

 

1.5

V

DC Current Gain

Hfe

VCE=5v IC=0.2A

20

25

 

Diode Forward Voltage

Vf

IF=1.0A

 

2

V

 

Storage Time

 

ts

 

Ic=0.25A (UI9602)

 

1.5

 

2.5

 

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TO-3 NPN Silicon Transistor
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Product Details

Product Code YZPST-2N6576
Port Shanghai
Payment Terms L/C, T/T, Other
Delivery Time 30 Days
Incoterm FOB,CFR,CIF
Productivity 1000
Transportation Ocean,Air
Supply Ability 10000
Brand YZPST
Certificate ISO9001-2008,ROHS
HS Code 85413000

Detail 01

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

60

V

 

Collector-Emitter Voltage

 

VCEO

 

60

 

V

Emitter-Base Voltage

VEBO

6.0

V

Collector Current

IC

15

A

Base Current

IB

0.5

A

Total Dissipation at

Ptot

120

W

 

Max. Operating Junction Temperature

Tj

120

oC

 

Storage Temperature

 

Tstg

 

-55~150

 

oC


Detail 02

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

 

Collector Cut-off Current

ICEO

 

VCE = 60V, IB = 0

 

-

 

-

 

1.0

 

mA

Collector Cut-off Current

ICBO

VCB = 60V, IE = 0

-

-

0.5

mA

 

Emitter Cut-off Current

 

IEBO

 

VEB = 5.0V, IC = 0

 

-

 

-

 

2.0

 

mA

 

Collector-Emitter Sustaining Voltage

 

VCEO

 

IC = 30mA, IB = 0

 

60

 

-

 

-

 

V

 

DC Current Gain

 

hFE(1)

 

VCE = 3.0V, IC = 4.0A

 

2000

 

-

 

-

 

 

hFE(2)

 

VCE = 3.0V, IC = 10A

 

500

 

-

 

-

 

Collector-Emitter Saturation Voltage

 

VCE(sat)

 

IC = 10A, IB = 100mA

 

-

 

-

 

2.5

 

V

IC = 15A, IB = 150mA

 

-

 

-

4.0

 

Base-Emitter Saturation Voltage

 

VBE(sat)

 

IC = 10A, IB = 100mA

 

-

 

-

 

3.5

 

V


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