Triac Transistors


BTB24 Triac Transistor
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Product Details

Product Code YZPST-BTB24
Port Shanghai
Payment Terms L/C, T/T, Other
Delivery Time 30 Days
Incoterm FOB,CFR,CIF
Productivity 1000
Transportation Ocean,Air
Supply Ability 10000
Brand YZPST
Certificate ISO9001-2008,ROHS
HS Code 85413000

Details

Symbol

Parameter

Value

Unit

IT(RMS)

Rms on-state current(full sine wave)

24

A

ITSM

Non- repetitive Peak on-state

Current (Tj=25 ,tp=20ms)

240

A

I2t

I2t for fusing(tp=10ms)

200

A2S

IGM

Peak gate current

5

A

VGM

Peak gate voltage

16

V

PGM

Peak gate power

40

W

PG(AV)

Average gate power

1

W

dIT/dt

Repetitive rate of rise of on-state current after triggering (IT=6A,IG=0.2A,dlG/dt=0.2A/us)

 

50

A/μs

IV

50

Tstg

Tj

Storage temperature

Operating junction temperature

-40--+150

-40--+125

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Condition

 

Type

Unit

Rth j-c

Thermal Resistance,Junction to case

One cycle

BTA

2.1

W

BTB

1.2

W

Rth j-a

Thermal Resisatance,Junction to ambient

----

--

60

W

*Electrical characteristics(Tj=25 unless otherwise stated)

Symbol

Conditions

Type

Max

Unit

IGT

 

BTB24

VD=12V IT=0.1A

T2+ G+

T2+ G-

T2- G-

 

 

11

15

20

 

 

18

30

30

 

 

mA

mA

mA

IH

VD=12V IGT=0.1A

 

50

mA

VTM

IT=24A

-1.25-

1.5

V

I DRM

V DRM=800V

 

10

μA

IRRM

VRRM=800V

 

15

μA

VGT

VD=12V IT=0.1A

Tj=125

--

 

1.5

V

ID

VD=VDRM(MAX)

Tj=125

--

0.5

mA

 

*Dynamic characteristics (Tj=25 unless otherwise stated)

Symbol

Test Conditions

Type

Min

Max

Unit

dV/dt

 

VDM=67%VDm(MAX)

Tj=125

500

 

250

 

 

--

 

 

V/μs

(dV/dt)c

(dI/dt)c=7A/ms Tj=125

 

--

 

10

 

 

 

μs


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BTA12 Triac Transistor
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Product Details

Product Code YZPST-BTA12
Port Shanghai
Payment Terms L/C, T/T, Other
Delivery Time 30 Days
Incoterm FOB,CFR,CIF
Productivity 1000
Transportation Ocean,Air
Supply Ability 10000
Brand YZPST
Certificate ISO9001-2008,ROHS
HS Code 85413000

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1200V 40A Triac Transistor
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Product Details

Port Shanghai
Payment Terms L/C, T/T, Other
Delivery Time 30 Days
Incoterm FOB,CFR,CIF
Productivity 1000
Transportation Ocean,Air
Supply Ability 10000
Brand YZPST
Certificate ISO9001-2008,ROHS
HS Code 85413000

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BD139 Triac Transistor
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Product Details

Product Code YZPST-BD139
Port Shanghai
Payment Terms L/C, T/T, Other
Delivery Time 30 Days
Incoterm FOB,CFR,CIF
Productivity 1000
Transportation Ocean,Air
Supply Ability 10000
Brand YZPST
Certificate ISO9001-2008,ROHS
HS Code 85413000

Details

Order codes

Marking

Package

Packaging

BD135

BD135

 

 

 

 

 

 

 

 

SOT-32

 

 

 

 

 

 

 

 

Tube

BD135-16

BD135-16

BD136

BD136

BD136-16

BD136-16

BD139

BD139

BD139-10

BD139-10

BD139-16

BD139-16

BD140

BD140

BD140-10

BD140-10

BD140-16

BD140-16

Table 2. Absolute maximum ratings

 

 

 

Symbol

 

 

 

Parameter

Value

 

 

 

Unit

NPN

PNP

BD135

BD139

BD136

BD140

VCBO

Collector-base voltage (IE = 0)

45

80

-45

-80

V

VCEO

Collector-emitter voltage (IB = 0)

45

80

-45

-80

V

VEBO

Emitter-base voltage (IC = 0)

5

-5

V

IC

Collector current

1.5

-1.5

A

ICM

Collector peak current

3

-3

A

IB

Base current

0.5

-0.5

A

PTOT

Total dissipation at Tc ≤ 25 °C

12.5

W

PTOT

Total dissipation at Tamb ≤ 25 °C

1.25

W

Tstg

Storage temperature

-65 to 150

°C

Tj

Max. operating junction temperature

150

°C

Table 3. Thermal data

Symbol

Parameter

Max value

Unit

Rthj-case

Thermal resistance junction-case

10

°C/W

Rthj-amb

Thermal resistance junction-ambient

100

°C/W

 

Symbol

 

Parameter

 

Polarity

 

Test conditions

Value

 

Unit

Min.

Typ.

Max.

 

 

ICBO

 

 

Collector cut-off current (I =0)

 

NPN

VCB = 30 V

VCB = 30 V, TC = 125 °C

 

 

0.1

10

µA

µA

 

PNP

VCB = -30 V

VCB = -30 V, TC = 125°C

 

 

-0.1

-10

µA

µA

 

IEBO

Emitter cut-off current

(I =0)

NPN

VEB = 5 V

 

 

10

µA

PNP

VEB = -5 V

 

 

-10

µA

 

 

 

 

VCEO(sus)(1)

 

 

Collector-emitter sustaining voltage (IB=0)

 

 

NPN

IC = 30 mA BD135

BD139

 

 

45

80

 

 

 

 

V V

 

 

PNP

IC = -30 mA BD136

BD140

 

 

-45

-80

 

 

 

 

V V

 

VCE(sat) (1)

 

Collector-emitter saturation voltage

NPN

IC = 0.5 A, IB = 0.05 A

 

 

0.5

V

PNP

IC = -0.5 A, IB = -0.05 A

 

 

-0.5

V

 

VBE (1)

 

Base-emitter voltage

NPN

IC = 0.5 A, VCE = 2 V

 

 

1

V

PNP

IC = -0.5 A, VCE = -2 V

 

 

-1

V

 

 

 

 

hFE (1)

 

 

 

 

DC current gain

 

 

NPN

IC = 5 mA, VCE = 2 V

IC = 150 mA, VCE = 2 V IC = 0.5 A, VCE = 2 V

25

40

25

 

 

 

250

 

 

 

PNP

IC = -5 mA, VCE = -2 V

IC = -150 mA, VCE = -2 V IC = -0.5 A, VCE = -2 V

25

40

25

 

 

 

250

 

 

 

 

 

hFE (1)

 

 

 

 

hFE groups

 

 

NPN

IC = 150 mA, VCE = 2 V BD139-10

BD135-16/BD139-16

 

 

63

100

 

 

 

160

250

 

 

 

PNP

IC = -150 mA, VCE = -2 V BD140-10

BD136-16/BD140-16

 

 

63

100

 

 

 

160

250

 

Table 4. On/off states

 

Symbol

 

Parameter

 

Polarity

 

Test conditions

Value

 

Unit

Min.

Typ.

Max.

 

 

ICBO

 

 

Collector cut-off current (I =0)

 

NPN

VCB = 30 V

VCB = 30 V, TC = 125 °C

 

 

0.1

10

µA

µA

 

PNP

VCB = -30 V

VCB = -30 V, TC = 125 °C

 

 

-0.1

-10

µA

µA

 

IEBO

Emitter cut-off current

(I =0)

NPN

VEB = 5 V

 

 

10

µA

PNP

VEB = -5 V

 

 

-10

µA

 

 

 

 

VCEO(sus)(1)

 

 

Collector-emitter sustaining voltage (IB=0)

 

 

NPN

IC = 30 mA BD135

BD139

 

 

45

80

 

 

 

 

V V

 

 

PNP

IC = -30 mA BD136

BD140

 

 

-45

-80

 

 

 

 

V V

 

VCE(sat) (1)

 

Collector-emitter saturation voltage

NPN

IC = 0.5 A, IB = 0.05 A

 

 

0.5

V

PNP

IC = -0.5 A, IB = -0.05 A

 

 

-0.5

V

 

VBE (1)

 

Base-emitter voltage

NPN

IC = 0.5 A, VCE = 2 V

 

 

1

V

PNP

IC = -0.5 A, VCE = -2 V

 

 

-1

V

 

 

 

 

hFE (1)

 

 

 

 

DC current gain

 

 

NPN

IC = 5 mA, VCE = 2 V

IC = 150 mA, VCE = 2 V IC = 0.5 A, VCE = 2 V

25

40

25

 

 

 

250

 

 

 

PNP

IC = -5 mA, VCE = -2 V

IC = -150 mA, VCE = -2 V IC = -0.5 A, VCE = -2 V

25

40

25

 

 

 

250

 

 

 

 

 

hFE (1)

 

 

 

 

hFE groups

 

 

NPN

IC = 150 mA, VCE = 2 V BD139-10

BD135-16/BD139-16

 

 

63

100

 

 

 

160

250

 

 

 

PNP

IC = -150 mA, VCE = -2 V BD140-10

BD136-16/BD140-16

 

 

63

100

 

 

 

160

250

 

 


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